Removal of transition metal ternary and/or quaternary barrier materials from a substrate
    2.
    发明授权
    Removal of transition metal ternary and/or quaternary barrier materials from a substrate 失效
    从基底去除过渡金属三元和/或四元阻挡材料

    公开(公告)号:US07371688B2

    公开(公告)日:2008-05-13

    申请号:US10942301

    申请日:2004-09-15

    IPC分类号: H01L21/302 H01L21/461

    摘要: A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

    摘要翻译: 本文公开了用于选择性地从衬底中去除蚀刻和/或清洁应用的物质的方法。 在一个实施方案中,提供了从基材中除去物质的方法,包括:提供具有沉积在其上的物质的基材,其中所述物质包含过渡金属三元化合物,过渡金属季铵化合物及其组合; 使物质与包含含氟气体和任选的添加气体的工艺气体反应以形成挥发性产物; 并从基材中除去挥发性产物,从而从基材中除去物质。