公开(公告)号：US06197606B1

公开(公告)日：2001-03-06

申请号：US09108439

申请日：1998-07-01

申请人： Maria Luisa Polignano ,  Marzio Brambilla ,  Francesco Cazzaniga ,  Giuseppe Pavia ,  Federica Zanderigo

发明人： Maria Luisa Polignano ,  Marzio Brambilla ,  Francesco Cazzaniga ,  Giuseppe Pavia ,  Federica Zanderigo

IPC分类号： H01L2166

CPC分类号： H01L22/12

摘要： The depth of a denuded layer with respect to a relatively defective bulk region of a monocrystalline semiconductor wafer is estimated in a nondestructive way. The depth is determined by measuring the lifetime or diffusion length of injected excess minority charge carriers on a surface of the wafer having such a denuded layer and on a different portion of the surface of the wafer from where the denuded layer has been previously stripped-off by lapping and/or etching. The depth is calculated through a best-fit procedure or through numerical processing of the measurement results on the basis of the diffusion equations of excess minority carriers.

摘要翻译： 以非破坏性方式估计相对于单晶半导体晶片的相对有缺陷的体区的裸露层的深度。 通过测量在具有这种剥离层的晶片的表面上以及晶片表面的不同部分之前注入的多余少数电荷载体的寿命或扩散长度，其中已被剥离的裸露层 通过研磨和/或蚀刻。 通过最佳拟合程序或通过基于过剩少数载体的扩散方程的测量结果的数值处理来计算深度。