-
1.发明申请Method for setting an operating parameter of a particle beam device and a sample holder for performing the method 审中-公开用于设置用于执行该方法的粒子束装置和样品架的操作参数的方法公开(公告)号：US20100230584A1
公开(公告)日：2010-09-16
申请号：US12655635
申请日：2010-01-04
CPC分类号： H01J37/20 , H01J37/153 , H01J37/26 , H01J37/263 , H01J37/265 , H01J2237/1534 , H01J2237/201 , H01J2237/2826
摘要： A method for adjusting an operating parameter of a particle beam device and a sample holder, which is suitable in particular for performing the method are provided. An adjustment of an operating parameter of a particle beam device is possible without transfer of the sample holder out of the particle beam device. A reference sample is placed in a first sample receptacle, so that in ongoing operation of the particle beam device, the sample holder need only be positioned in such a way that the reference sample is bombarded and measured with the aid of a particle beam generated in the particle beam device.
摘要翻译： 提供了一种用于调整特别用于执行该方法的粒子束装置和样品架的操作参数的方法。 在将粒子束装置的样品保持器转移出来之前，可以调整粒子束装置的操作参数。 将参考样品放置在第一样品容器中，使得在粒子束装置的持续操作中，样品保持器仅需要以使得参考样品被轰击和测量的方式定位，借助于在 粒子束装置。
-
公开(公告)号：US06197606B1
公开(公告)日：2001-03-06
申请号：US09108439
申请日：1998-07-01
申请人： Maria Luisa Polignano , Marzio Brambilla , Francesco Cazzaniga , Giuseppe Pavia , Federica Zanderigo
发明人： Maria Luisa Polignano , Marzio Brambilla , Francesco Cazzaniga , Giuseppe Pavia , Federica Zanderigo
IPC分类号： H01L2166
CPC分类号： H01L22/12
摘要： The depth of a denuded layer with respect to a relatively defective bulk region of a monocrystalline semiconductor wafer is estimated in a nondestructive way. The depth is determined by measuring the lifetime or diffusion length of injected excess minority charge carriers on a surface of the wafer having such a denuded layer and on a different portion of the surface of the wafer from where the denuded layer has been previously stripped-off by lapping and/or etching. The depth is calculated through a best-fit procedure or through numerical processing of the measurement results on the basis of the diffusion equations of excess minority carriers.
摘要翻译： 以非破坏性方式估计相对于单晶半导体晶片的相对有缺陷的体区的裸露层的深度。 通过测量在具有这种剥离层的晶片的表面上以及晶片表面的不同部分之前注入的多余少数电荷载体的寿命或扩散长度，其中已被剥离的裸露层 通过研磨和/或蚀刻。 通过最佳拟合程序或通过基于过剩少数载体的扩散方程的测量结果的数值处理来计算深度。
-
3.发明申请METHOD FOR SETTING AN OPERATING PARAMETER OF A PARTICLE BEAM DEVICE AND A SAMPLE HOLDER FOR PERFORMING THE METHOD 审中-公开用于设置粒子束装置的操作参数的方法和用于执行该方法的样品保持器公开(公告)号：US20130234011A2
公开(公告)日：2013-09-12
申请号：US12655635
申请日：2010-01-04
CPC分类号： H01J37/20 , H01J37/153 , H01J37/26 , H01J37/263 , H01J37/265 , H01J2237/1534 , H01J2237/201 , H01J2237/2826
摘要： A method for adjusting an operating parameter of a particle beam device and a sample holder, which is suitable in particular for performing the method are provided. An adjustment of an operating parameter of a particle beam device is possible without transfer of the sample holder out of the particle beam device. A reference sample is placed in a first sample receptacle, so that in ongoing operation of the particle beam device, the sample holder need only be positioned in such a way that the reference sample is bombarded and measured with the aid of a particle beam generated in the particle beam device.
摘要翻译： 提供了一种用于调整特别用于执行该方法的粒子束装置和样品架的操作参数的方法。 在将粒子束装置的样品保持器转移出来之前，可以调整粒子束装置的操作参数。 将参考样品放置在第一样品容器中，使得在粒子束装置的持续操作中，样品保持器仅需要以使得参考样品被轰击和测量的方式定位，借助于在 粒子束装置。
-
-
搜索结果
3 条记录 (耗时 0.01 秒)
