Metal vapor discharge lamp
    1.
    发明授权
    Metal vapor discharge lamp 失效
    金属蒸汽放电灯

    公开(公告)号:US4769576A

    公开(公告)日:1988-09-06

    申请号:US909671

    申请日:1986-09-22

    IPC分类号: H01J61/18 H01J65/04 H01J61/20

    CPC分类号: H01J61/18 H01J65/044

    摘要: A metal vapor discharge lamp includes a light-emitting tubing in which a halogen and iron at least 0.005 mg per cc of the internal volume of the light-emitting tubing are filled together with mercury and a rare gas in amounts sufficient to retain a discharge. Magnesium is additionally filled in at a magnesium-to-iron ratio of 1/40-2/3 in terms of gram atom number so as to prevent iron from depositing on the inner wall of the light-emitting tubing and forming a thin film thereon.

    摘要翻译: 金属蒸汽放电灯包括发光管,其中将卤素和铁至少0.005mg / cc的发光管的内部体积与汞和稀有气体一起填充,其量足以保持放电。 另外以克原子数以镁/铁比为1 / 40-2 / 3填充镁,以防止铁沉积在发光管的内壁上并在其上形成薄膜 。

    Metal vapor discharge lamp filled with bismuth, mercury, a rare gas,
iron and a halogen
    2.
    发明授权
    Metal vapor discharge lamp filled with bismuth, mercury, a rare gas, iron and a halogen 失效
    金属蒸气放电灯与BISMUTH,MERCURY,稀有气体,铁和卤素

    公开(公告)号:US5107178A

    公开(公告)日:1992-04-21

    申请号:US636587

    申请日:1991-01-02

    IPC分类号: H01J61/12

    CPC分类号: H01J61/12

    摘要: A metal vapor discharge lamp comprises a light-emitting tube filled with bismuth together with mercury, a rare gas, iron and a halogen in the range of 1/20-6/1 in terms of the gram atom ratio of bismuth to iron (Bi/Fe). A metal vapor discharge lamp also comprises a long light-emitting tube having an inner diameter D of 18-35 mm, equipped with a pair of electrodes and having an electrode interval L of 750 mm or greater, filled with bismuth together with mercury in a sealed amount of 0.6-2.0 mg per cc of the internal volume of the light-emitting tube, a rare gas, iron and a halogen in the range of 1/20-6/1 in terms of the gram atom ratio of bismuth to iron (Bi/Fe).

    Metallic vapor discharge lamp and a method for curing paints and inks
therewith
    3.
    发明授权
    Metallic vapor discharge lamp and a method for curing paints and inks therewith 失效
    金属蒸汽放电灯和用于固化油漆和油墨的方法

    公开(公告)号:US5394059A

    公开(公告)日:1995-02-28

    申请号:US978565

    申请日:1992-11-19

    IPC分类号: H01J61/18 H01J61/20

    CPC分类号: H01J61/18

    摘要: In a metallic vapor discharge lamp, in whose arc tube provided with electrodes are encapsulated together with mercury and inert gas, whose quantity is adequate for maintaining arc discharges, an adequate quantity of iron and an adequate quantity of a metal, in which at least one of the metals tin, magnesium, bismuth, thallium, cadmium or manganese is selected, together with halogen, as a result of the fact that the encapsulated halogen at least contains bromine, whose weight ratio to the total halogen is 0.26%, the adhesion of iron to the inside of the arc tube is prevented and consequently a radiation intensity of the ultraviolet rays effective for curing paints or inks is maintained over a long period of time.

    摘要翻译: 在金属蒸汽放电灯中,其电极中的电极与汞和惰性气体一起封装在一起,其量足以维持电弧放电,足够量的铁和足量的金属,其中至少一个 的金属锡,镁,铋,铊,镉或锰与卤素一起选择,其结果是包封的卤素至少含有溴,其与总卤素的重量比为0.26%,粘合性 防止铁到电弧管的内部,因此在长时间内保持有效用于固化油漆或油墨的紫外线的辐射强度。

    Process for the exposure of semiconductor wafer
    5.
    发明授权
    Process for the exposure of semiconductor wafer 失效
    半导体晶片曝光的工艺

    公开(公告)号:US4704346A

    公开(公告)日:1987-11-03

    申请号:US868690

    申请日:1986-05-30

    CPC分类号: G03F7/70016

    摘要: A semiconductor wafer can be exposed by arranging a combination of electrodes in an opposed relation with an interelectrode distance of not more than 15 mm in a closed discharge cavity, enclosing, within the cavity, mercury as a light-emitting discharge component in an amount such that the vapor pressure of mercury reaches 0.4-5 atms during discharge lighting, forming a discharge between the combination of electrodes while controlling the discharge current at not less than 10 A, and irradiating light, which has been radiated as a result of the discharge and contains at least one of light components having wave-lengths of 405 nm and 436 nm respectively, onto the surface of a photoresist applied on the semiconductor wafer through a photomask or reticle and a lens which permits transmission of the light having wavelength of 405 nm or 436 nm therethrough.

    摘要翻译: 半导体晶片可以通过在封闭的放电空腔中以相对的关系布置电极的组合,在封闭的放电空腔内封闭,作为发光放电部件的水银作为发光放电部件 在放电照明期间汞的蒸气压达到0.4-5atms,在控制放电电流不小于10A的同时在电极组合之间形成放电,并且照射由于放电而放射的光;以及 通过光掩模或掩模版和透镜,在波长为405nm的透镜和透镜上分别具有波长为405nm和436nm的光分量中的至少一种, 436 nm。