公开(公告)号：US5421934A

公开(公告)日：1995-06-06

申请号：US37298

申请日：1993-03-26

申请人： Akio Misaka ,  Kenji Harafugi ,  Masafumi Kubbota ,  Noboru Nomura

发明人： Akio Misaka ,  Kenji Harafugi ,  Masafumi Kubbota ,  Noboru Nomura

IPC分类号： G06F17/50 ,  H01L21/30 ,  H01L21/00

CPC分类号： H01L21/30 ,  G06F17/5018

摘要： A new surface reaction model has been presented to simulate topological evolutions by taking into account the existence of absorbed radicals on the substrate surface. The model treats the etching rate as a function of the coverage ratio by absorbed radicals on the surface. Based on the model, a two-dimensional topography simulator has been provided. The simulator is applied to silicon-dioxide trench teachings made by hydrofluorcarbon gases. The topography simulator is used in a dry-etching process for realizing sub-half micron patternings.

摘要翻译： 已经提出了一种新的表面反应模型，通过考虑衬底表面上吸收的自由基的存在来模拟拓扑演化。 该模型通过表面上吸收的自由基将蚀刻速率视为覆盖率的函数。 基于该模型，提供了二维地形模拟器。 模拟器应用于由氢氟碳气体制成的二氧化硅沟槽教导。 地形模拟器用于实现半微米图案的干蚀刻工艺。