摘要:
A new surface reaction model has been presented to simulate topological evolutions by taking into account the existence of absorbed radicals on the substrate surface. The model treats the etching rate as a function of the coverage ratio by absorbed radicals on the surface. Based on the model, a two-dimensional topography simulator has been provided. The simulator is applied to silicon-dioxide trench teachings made by hydrofluorcarbon gases. The topography simulator is used in a dry-etching process for realizing sub-half micron patternings.
摘要:
A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
摘要:
A mask pattern including, for example, a light-shielding portion 101 and a first transparent portion 104A surrounded with a semi-light-shielding portion 102 are provided on a transparent substrate 100. The mask pattern includes a first pattern region and a second pattern region opposing each other with the semi-light-shielding portion 102 and the first transparent portion 104A sandwiched therebetween.
摘要:
A photomask has a semi-light-shielding portion having a light-shielding property and a light-transmitting portion surrounded by the semi-light-shielding portion, and a peripheral portion positioned in the periphery of the light-transmitting portion. The semi-light-shielding portion and the light-transmitting portion transmit exposure light in the same phase, whereas the peripheral portion transmits exposure light in a phase opposite to that of the light-transmitting portion.
摘要:
A mask pattern to be provided on a transparent substrate 2 includes a semi-light-shielding portion 3 which transmits exposure light in the same phase as that of the light-transmitting portion 4 and a phase shifter 5 which transmits exposure light in a phase opposite to that of the light-transmitting portion 4. The semi-light-shielding portion 3 has a transmittance which allows exposure light to be partially transmitted. The phase shifter 5 is provided in a region of the mask pattern in which light transmitted through the phase shifter 5 can cancel part of the light transmitted through the light-transmitting portion 4 and the semi-light-transmitting portion 3.
摘要:
A mask pattern 40 including a light-shielding portion 41 constituted by a light-shielding film made of a chromium film or the like and phase shifters 42 and 43 is formed on a transparent substrate 30. The phase shifters 42 and 43 generate a phase difference of 180 degrees with respect to exposure light between the phase shifters and the transparent substrate 30. A first light intensity generated in a light-shielded image formation region corresponding to the mask pattern 40 on an exposed material by the exposure light transmitted through the phase shifters 42 and 43 is not more than four times a second light intensity generated in the light-shielded image formation region by the exposure light that is transmitted through the periphery of the mask pattern 40 on the transparent substrate 30 and goes into the back side of the mask pattern 40.
摘要:
A photomask is used for transferring a mask pattern onto a semiconductor substrate. The mask pattern includes a junction at which two line patterns are connected to each other with one line pattern being orthogonal to the other line pattern so as to form a T-shape, or a proximity portion at which two line patterns are located close to each other with one line pattern being substantially orthogonal to the other line pattern so as to form a T-shape. A small pattern is formed on a side edge of the line pattern in the vicinity of the junction or the proximity portion so as to form a wide portion of the line pattern. The small pattern is provided within the range between 0.79 and 1.8 λ/(NA·K) of a distance from the neighboring side edge of the other line pattern, where λ is the wavelength of exposure illumination light, NA is the numerical aperture of a lens used, and K is a transfer reduction ratio.
摘要:
A semiconductor device includes: a plurality of line features including at least one real feature which includes a gate electrode portion, and at least one dummy feature. Two of multiple ones of the dummy feature, and at least one of the line features interposed between the two dummy features and including the at least one real feature form parallel running line features which are evenly spaced. The parallel running line features have an identical width, and line end portions of the parallel running line features are substantially flush. Line end portion uniformization dummy features are formed on extensions of the line end portions of the parallel running line features. The line end portion uniformization dummy features include a plurality of linear features each having a same width as each of the line features and spaced at intervals equal to an interval between each adjacent pair of the line features.
摘要:
A mask pattern includes a main pattern to be transferred through exposure and an auxiliary pattern that diffracts exposing light and is not transferred through the exposure. The main pattern is made from a shielding portion, a phase shifter or a combination of a semi-shielding portion or a shielding portion and a phase shifter. The auxiliary pattern is made from a shielding portion or a semi-shielding portion. The auxiliary pattern is disposed in a position away from the main pattern by a distance M×(λ/(2×sin φ)) or M×((λ/(2×sin φ))+(λ/(NA+sin φ))), wherein λ indicates a wavelength of the exposing light, M and NA indicate magnification and numerical aperture of a reduction projection optical system of an aligner and φ indicates an oblique incident angle.
摘要:
A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.