公开(公告)号：US20080009063A1

公开(公告)日：2008-01-10

申请号：US11773127

申请日：2007-07-03

申请人： Teruo Okano ,  Masayuki Yamato ,  Yoshikatsu Akiyama ,  Masanao Watanabe ,  Hiroyuki Naganuma ,  Masami Nara

发明人： Teruo Okano ,  Masayuki Yamato ,  Yoshikatsu Akiyama ,  Masanao Watanabe ,  Hiroyuki Naganuma ,  Masami Nara

IPC分类号： C12N5/02

CPC分类号： C12N5/0068 ,  C12M25/00 ,  C12M25/06 ,  C12N2533/30 ,  C12N2535/00 ,  C12N2535/10 ,  C12N2539/10

摘要： An object of the present invention is to provide a cell culture substrate capable of quickly forming a cell sheet and easily removing the cell sheet after formed. The present invention relates to a cell culture substrate for forming a cell sheet by culturing cells, comprising a plurality of projections each having a top face and depressions formed between the projections, in which the depressions each have an opening whose dimensions are too small for a cell to be cultured to enter and the cell sheet is removable. The present invention further relates to a method of preparing a cell sheet using the substrate and a cell sheet prepared by the method.

摘要翻译： 本发明的目的是提供能够快速形成细胞片并且容易地除去细胞片的细胞培养基材。 本发明涉及用于通过培养细胞形成细胞片的细胞培养基质，所述细胞培养基底包括多个突起，每个突起具有顶表面和在所述突起之间形成的凹陷，其中所述凹陷各自具有尺寸对于 要培养的细胞进入，细胞片是可移除的。 本发明还涉及使用该基材制备细胞片的方法和通过该方法制备的细胞片。

公开(公告)号：US5965301A

公开(公告)日：1999-10-12

申请号：US976453

申请日：1997-11-25

申请人： Masami Nara ,  Toshifumi Yokoyama ,  Tsukasa Abe

发明人： Masami Nara ,  Toshifumi Yokoyama ,  Tsukasa Abe

IPC分类号： G03F1/00 ,  G03F1/30 ,  G03F1/32 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  G03F9/00

CPC分类号： G03F1/74

摘要： A method for repairing a photomask by removing a residual defect in the photomask is provided which can solve problems, involved in repair of the photomask by the conventional laser beam irradiation, such as various types of maladjustments, limitation of focusing of a laser beam, creation of roughening in the repaired area, and problems, involved in repair of the photomask by focused ion beam irradiation, such as damage to a transparent substrate and a gallium stain. The method comprises the steps of: (a) applying actinic radiation to the residual defect area to remove the residual defect except for a defect edge region having a predetermined width from the periphery of the residual defect area over the whole periphery of the residual defect area; and (b) removing the defect edge region, remaining unremoved by the physical means, having a predetermined width from the periphery of the residual defect area over the whole periphery of the residual defect area by chemical etching with a chemical, the predetermined width being such that the influence of the actinic radiation does not extend over the outside of the residual defect area and, at the same time, the etching time can be set so that the region having a predetermined width from the periphery is removed by the chemical etching without any substantial influence on other layers including a light-shielding layer.

摘要翻译： 提供了通过去除光掩模中的残余缺陷来修复光掩模的方法，其可以解决通过常规激光束照射来修复光掩模的问题，诸如各种不正确的调整，激光束的聚焦限制，创建 在修复区域中的粗糙化，以及涉及通过聚焦离子束照射修复光掩模的问题，例如对透明基板的损坏和镓污染。 该方法包括以下步骤：（a）将光化辐射施加到残余缺陷区域，以除去残留缺陷区域的整个周边之外的残留缺陷区域周围具有预定宽度的缺陷边缘区域的残余缺陷 ; 和（b）通过化学蚀刻从残余缺陷区域的整个周边除去具有预定宽度的残留缺陷区域的预定宽度的物理装置保留的缺陷边缘区域，预定宽度为 光化辐射的影响不会延伸到残余缺陷区域的外部，并且同时可以设定蚀刻时间，使得通过化学蚀刻除去具有来自周边的预定宽度的区域，而没有任何 对包括遮光层的其它层的显着影响。