公开(公告)号：US06454100B1

公开(公告)日：2002-09-24

申请号：US09976035

申请日：2001-10-15

申请人： Makoto Yanagihara ,  Masamitsu Shimasaki ,  Iwao Sakai

发明人： Makoto Yanagihara ,  Masamitsu Shimasaki ,  Iwao Sakai

IPC分类号： B07C502

CPC分类号： B07C5/02 ,  B07C5/34 ,  B07C5/344

摘要： A semiconductor element carrying apparatus for surely recovering semiconductor elements dropped in the environs of an electric driver. A lower base member is disposed under a carrying inlet, an inspecting part and a carrying outlet for semiconductor elements, such as semiconductor integrated circuit devices. On the lower base member, an electric driver cover covering an electric driver and a collector is disposed for collecting the semiconductor elements dropped. The semiconductor elements dropped on the electric driver cover are guided to the collector. The collector is equipped with a collector outlet, and a semiconductor collecting vessel is arranged under the collector outlet. Furthermore, an air blower blows compressed air along a slope from a nozzle to move dropped semiconductor devices.

摘要翻译： 一种半导体元件承载装置，用于可靠地回收掉在电动驱动器周围的半导体元件。 下基部件设置在诸如半导体集成电路器件的承载入口，用于半导体元件的检查部分和承载出口的下方。 在下部基座部件上设置覆盖电动驱动器和集电器的电动驱动器罩，用于收集半导体元件的落下。 落在电驱动器盖上的半导体元件被引导到集电器。 收集器配有收集器出口，集电器出口下方设有半导体收集容器。 此外，鼓风机沿着斜面从喷嘴吹送压缩空气以移动掉落的半导体器件。

公开(公告)号：US5416740A

公开(公告)日：1995-05-16

申请号：US987757

申请日：1992-12-09

申请人： Koreaki Fujita ,  Masayuki Yamashita ,  Masamitsu Shimasaki

发明人： Koreaki Fujita ,  Masayuki Yamashita ,  Masamitsu Shimasaki

IPC分类号： G11C11/413 ,  G11C11/401 ,  G11C29/00 ,  G11C29/04 ,  G11C29/44 ,  G11C7/00

CPC分类号： G11C29/808 ,  G11C29/44

摘要： An SRAM disclosed herein includes 64 memory cell array blocks and a redundant memory cell array block. The redundant memory cell array includes a total of 16 redundant memory cell columns. A defect address indicating a location of a defective memory column is programmed in an address programming circuit, and the specific defecting column in the defect address is programmed in an I/O programming circuit. Although each memory cell does not include a spare memory cell column or row for redundancy, the defect can be repaired by using a redundant memory cell array, so that the high integration of the SRAM can be accomplished.

摘要翻译： 本文公开的SRAM包括64个存储单元阵列块和冗余存储单元阵列块。 冗余存储单元阵列包括总共16个冗余存储单元列。 指示缺陷存储器列的位置的缺陷地址被编程在地址编程电路中，缺陷地址中的特定缺陷列被编程在I / O编程电路中。 虽然每个存储器单元不包括用于冗余的备用存储单元列或行，但是可以通过使用冗余存储单元阵列来修复缺陷，使得可以实现SRAM的高集成度。