Method for compensating exposure value for exposure process in semiconductor manufacturing system
    1.
    发明授权
    Method for compensating exposure value for exposure process in semiconductor manufacturing system 失效
    补偿半导体制造系统曝光过程曝光值的方法

    公开(公告)号:US06599670B2

    公开(公告)日:2003-07-29

    申请号:US09866617

    申请日:2001-05-30

    IPC分类号: G03F900

    摘要: A method of determining an exposure value for exposing a resist film, comprises the steps of: estimating a size variation of a resist pattern from a predetermined target size based on a waiting time of a currently processing resist film to be patterned in subsequent sequential exposure and development processes; and compensating a reference exposure value based on said size variation to obtain a compensated exposure value.

    摘要翻译: 一种确定用于曝光抗蚀剂膜的曝光值的方法,包括以下步骤:基于在随后的顺序曝光中待图案化的当前处理的抗蚀剂膜的等待时间,从预定目标尺寸估计抗蚀剂图案的尺寸变化;以及 开发过程; 以及基于所述尺寸变化补偿参考曝光值以获得补偿曝光值。