公开(公告)号：US20120272514A1

公开(公告)日：2012-11-01

申请号：US13459644

申请日：2012-04-30

申请人： Hiroshi Naito ,  Hideki Sato ,  Yukio Wakui ,  Masaysoshi Omura

发明人： Hiroshi Naito ,  Hideki Sato ,  Yukio Wakui ,  Masaysoshi Omura

IPC分类号： H01F7/06

CPC分类号： H01L27/22 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/093 ,  H01L43/12 ,  Y10T29/4902 ,  Y10T29/49075

摘要： A magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming X-axis and Y-axis sensors are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels in the thick film. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.

摘要翻译： 一种磁传感器，用于检测在单个半导体衬底上形成多个巨磁电阻元件的三个轴向的磁场强度。 在半导体衬底上形成厚膜; 在其平面上形成形成X轴和Y轴传感器的巨磁阻元件; 并且使用厚膜中的沟道的斜面形成形成Z轴传感器的巨磁阻元件。 通道的每个斜面都可以由第一斜面和第二斜面构成，从而在具有较大倾斜角的第二斜面上形成磁敏元件。 为了优化相对于每个通道的斜率形状和倾斜度，可以形成与形成巨磁阻元件没有直接关系的虚拟斜率。