公开(公告)号：US20070275514A1

公开(公告)日：2007-11-29

申请号：US11802757

申请日：2007-05-24

申请人： Masayuki Itou

发明人： Masayuki Itou

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/76

CPC分类号： H01L21/76229 ,  H01L21/743 ,  H01L21/84 ,  H01L27/1203

摘要： Semiconductor device is prevented from undergoing decline in characteristics and reliability even if width of isolation trench is reduced. Semiconductor device includes: substrate obtained by building up second silicon substrate on first silicon substrate via silicon oxide film; element-forming region in which elements (gate electrode and source/drain region) have been formed; substrate-contact aperture region in which substrate-contact aperture has been formed; isolation trench region in which an isolation trench isolating elements on the second silicon substrate has been formed; polysilicon filling the isolation trench; a prepared hole penetrating silicon oxide films of the substrate-contact aperture region and leading to the first silicon substrate; and a wiring layer connected to the first silicon substrate within the prepared hole.

摘要翻译： 即使减小了隔离沟的宽度，也防止了半导体装置的特性和可靠性的下降。 半导体装置包括：通过氧化硅膜在第一硅衬底上建立第二硅衬底获得的衬底; 元件形成区域，其中元件（栅极电极和源极/漏极区域）已经形成; 已形成衬底接触孔的衬底接触孔区域; 隔离沟槽区域，其中形成有第二硅衬底上的隔离沟槽隔离元件; 多晶硅填充隔离沟槽; 准备穿透基板 - 接触孔径区域并穿过第一硅衬底的氧化硅膜的孔; 以及在所述预制孔内与所述第一硅衬底连接的布线层。

公开(公告)号：US20070018276A1

公开(公告)日：2007-01-25

申请号：US11534862

申请日：2006-09-25

申请人： Masayuki Itou

发明人： Masayuki Itou

IPC分类号： H01L29/00

CPC分类号： H01L21/763 ,  H01L21/76224 ,  H01L21/76232

摘要： A method of manufacturing a semiconductor device that suppresses emergence of a waste in an isolation trench formation process is to be provided. The method comprises forming an isolation trench having a predetermined depth from a surface of a semiconductor substrate; forming a dielectric layer on the surface of the semiconductor substrate including the isolation trench; filling the isolation trench with a CVD layer; removing the dielectric layer except a portion in the isolation trench by an etching; sequentially forming an insulating layer and a conductive layer; forming a resist defining a pattern which covers via the conductive layer a portion of the insulating layer in contact with the dielectric layer; and performing an anisotropic etching on the resist to thereby remove a portion of the conductive layer exposing a surface thereof.

摘要翻译： 提供了制造在隔离沟槽形成处理中抑制废物的出现的半导体装置的制造方法。 该方法包括从半导体衬底的表面形成具有预定深度的隔离沟槽; 在包括所述隔离沟槽的所述半导体衬底的表面上形成介电层; 用CVD层填充隔离沟槽; 通过蚀刻除去隔离沟槽中的部分之外的介电层; 依次形成绝缘层和导电层; 形成限定图案的抗蚀剂，所述图案通过所述导电层覆盖与所述电介质层接触的所述绝缘层的一部分; 并对抗蚀剂进行各向异性蚀刻，从而去除暴露其表面的导电层的一部分。

公开(公告)号：US5264844A

公开(公告)日：1993-11-23

申请号：US939595

申请日：1992-09-02

申请人： Masayuki Itou ,  Hidehito Mori

发明人： Masayuki Itou ,  Hidehito Mori

IPC分类号： F02D41/34 ,  G01D5/246 ,  G01P3/489 ,  H03M1/30

CPC分类号： F02D41/009 ,  G01D5/246 ,  G01P3/489

摘要： An apparatus for detecting the angular position for an internal combustion engine is capable of accurately detecting the angular position by a simple structure without being influenced by changes in the period of angular position signals due to inaccuracy of rotor contour and a change in rotational speed. Up-down counters up and down count clock pulses in response to the pulse train from a rotation sensor for determining information on unequal interval corresponding to a reference position in the pulse train. The frequency of the angular position is divided by a frequency dividing circuit. Up-down counting of clock pulses by the first and second up-down counters is terminated within two periods of the angular position signal. The outputs of the first and second up-down counters are alternatively up counted and down counted every one period of the angular position signal to determine the reference angular position based upon any one of determination outputs from up-down counters.

摘要翻译： 用于检测内燃机的角位置的装置能够通过简单的结构精确地检测角位置，而不受转子轮廓的不准确和转速变化的角位置信号周期的变化的影响。 响应于来自旋转传感器的脉冲序列，上下计数器上下计数时钟脉冲，用于确定与脉冲串中的参考位置相对应的不等间隔的信息。 角位置的频率由分频电路分压。 通过第一和第二上下计数器的时钟脉冲的向上计数在角度位置信号的两个周期内终止。 在角位置信号的每一个周期，第一和第二上下计数器的输出被替换地向上计数和下降计数，以基于来自上下计数器的确定输出中的任何一个来确定参考角位置。

公开(公告)号：US07968837B2

公开(公告)日：2011-06-28

申请号：US12280536

申请日：2006-02-23

申请人： Satoshi Nakajima ,  Masayuki Itou

发明人： Satoshi Nakajima ,  Masayuki Itou

IPC分类号： G06M7/00

CPC分类号： G08B17/103 ,  G01N21/534

摘要： An object is to provide a separated sensor capable of synchronizing a light transmitting unit with a light receiving unit, without using a control line.There is provided a separated sensor including a light transmitting unit that transmits detection light to a monitoring area, and a light receiving unit that receives detection light transmitted by the light transmitting unit, the light transmitting unit and the light receiving unit laid out separately from each other. On one of the light transmitting unit and the light receiving unit, there is provided a synchronization-light transmitting unit that transmits, by wireless, synchronization light to synchronize the light transmitting unit with the light receiving unit. On the other of the light transmitting unit and the light receiving unit, there are provided a synchronization-light receiving unit that receives the synchronization light transmitted from the synchronization-light transmitting unit, and a synchronization-establishment processing unit that performs a predetermined process to establish the synchronization based on the synchronization light received by the synchronization-light receiving unit.

摘要翻译： 目的是提供一种能够使光传输单元与光接收单元同步的分离的传感器，而不使用控制线。 提供了一种分离的传感器，其包括将检测光传输到监视区域的光发射单元，以及光接收单元，其接收由光发射单元，光发射单元和光接收单元传输的检测光， 其他。 在光发射单元和光接收单元中的一个上，设置有同步光发送单元，其通过无线方式发送同步光，以使光发送单元与光接收单元同步。 在光传输单元和光接收单元中的另一个中，设置有同步光接收单元，其接收从同步光发送单元发送的同步光，以及同步建立处理单元，其执行预定处理 基于由同步光接收单元接收的同步光来建立同步。

公开(公告)号：US20050101074A1

公开(公告)日：2005-05-12

申请号：US10983672

申请日：2004-11-09

申请人： Masayuki Itou

发明人： Masayuki Itou

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/763 ,  H01L21/76224 ,  H01L21/76232

摘要： A method of manufacturing a semiconductor device that suppresses emergence of a waste in an isolation trench formation process is to be provided. The method comprises forming an isolation trench having a predetermined depth from a surface of a semiconductor substrate; forming a dielectric layer on the surface of the semiconductor substrate including the isolation trench; filling the isolation trench with a CVD layer; removing the dielectric layer except a portion in the isolation trench by an etching; sequentially forming an insulating layer and a conductive layer; forming a resist defining a pattern which covers via the conductive layer a portion of the insulating layer in contact with the dielectric layer; and performing an anisotropic etching on the resist to thereby remove a portion of the conductive layer exposing a surface thereof.

摘要翻译： 提供了制造在隔离沟槽形成处理中抑制废弃物的出现的半导体装置的制造方法。 该方法包括从半导体衬底的表面形成具有预定深度的隔离沟槽; 在包括所述隔离沟槽的所述半导体衬底的表面上形成介电层; 用CVD层填充隔离沟槽; 通过蚀刻除去隔离沟槽中的部分之外的介电层; 依次形成绝缘层和导电层; 形成限定图案的抗蚀剂，所述图案通过所述导电层覆盖与所述电介质层接触的所述绝缘层的一部分; 并对抗蚀剂进行各向异性蚀刻，从而去除暴露其表面的导电层的一部分。

公开(公告)号：US20090026354A1

公开(公告)日：2009-01-29

申请号：US12280536

申请日：2006-02-23

申请人： Satoshi Nakajima ,  Masayuki Itou

发明人： Satoshi Nakajima ,  Masayuki Itou

IPC分类号： H01J3/14

CPC分类号： G08B17/103 ,  G01N21/534

摘要： [Object] An object is to provide a separated sensor capable of synchronizing a light transmitting unit with a light receiving unit, without using a control line.[Solving means] There is provided a separated sensor including a light transmitting unit that transmits detection light to a monitoring area, and a light receiving unit that receives detection light transmitted by the light transmitting unit, the light transmitting unit and the light receiving unit laid out separately from each other. On one of the light transmitting unit and the light receiving unit, there is provided a synchronization-light transmitting unit that transmits, by wireless, synchronization light to synchronize the light transmitting unit with the light receiving unit. On the other of the light transmitting unit and the light receiving unit, there are provided a synchronization-light receiving unit that receives the synchronization light transmitted from the synchronization-light transmitting unit, and a synchronization-establishment processing unit that performs a predetermined process to establish the synchronization based on the synchronization light received by the synchronization-light receiving unit.

摘要翻译： 目的在于提供一种能够使光传输单元与光接收单元同步的分离的传感器，而不使用控制线。 [解决方案]提供了一种分离的传感器，包括将检测光传输到监视区域的光发送单元和接收由光发送单元，光发送单元和光接收单元传送的检测光的光接收单元 彼此分开。 在光发射单元和光接收单元中的一个上，设置有同步光发送单元，其通过无线方式发送同步光，以使光发送单元与光接收单元同步。 在光传输单元和光接收单元中的另一个中，设置有同步光接收单元，其接收从同步光发送单元发送的同步光，以及同步建立处理单元，其执行预定处理 基于由同步光接收单元接收的同步光来建立同步。

公开(公告)号：US07259073B2

公开(公告)日：2007-08-21

申请号：US10983672

申请日：2004-11-09

申请人： Masayuki Itou

发明人： Masayuki Itou

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/763 ,  H01L21/76224 ,  H01L21/76232

摘要： A method of manufacturing a semiconductor device that suppresses emergence of a waste in an isolation trench formation process is to be provided.The method comprises forming an isolation trench having a predetermined depth from a surface of a semiconductor substrate; forming a dielectric layer on the surface of the semiconductor substrate including the isolation trench; filling the isolation trench with a CVD layer; removing the dielectric layer except a portion in the isolation trench by an etching; sequentially forming an insulating layer and a conductive layer; forming a resist defining a pattern which covers via the conductive layer a portion of the insulating layer in contact with the dielectric layer; and performing an anisotropic etching on the resist to thereby remove a portion of the conductive layer exposing a surface thereof.

摘要翻译： 提供了制造在隔离沟槽形成处理中抑制废物的出现的半导体装置的制造方法。 该方法包括从半导体衬底的表面形成具有预定深度的隔离沟槽; 在包括所述隔离沟槽的所述半导体衬底的表面上形成介电层; 用CVD层填充隔离沟槽; 通过蚀刻除去隔离沟槽中的部分之外的介电层; 依次形成绝缘层和导电层; 形成限定图案的抗蚀剂，所述图案通过所述导电层覆盖与所述电介质层接触的所述绝缘层的一部分; 并对抗蚀剂进行各向异性蚀刻，从而去除暴露其表面的导电层的一部分。