公开(公告)号：US06989972B1

公开(公告)日：2006-01-24

申请号：US10261119

申请日：2002-09-30

申请人： Kroum Stoev ,  Mathew Gibbons ,  Francis Liu ,  Bogdan M. Simion ,  Aparna C. Vadde ,  Jing Zhang ,  Yiming Huai ,  Marcos M. Lederman

发明人： Kroum Stoev ,  Mathew Gibbons ,  Francis Liu ,  Bogdan M. Simion ,  Aparna C. Vadde ,  Jing Zhang ,  Yiming Huai ,  Marcos M. Lederman

IPC分类号： G11B5/39

CPC分类号： G11B5/3932

摘要： Magnetoresistive (MR) sensors have leads that overlap a MR structure and distribute current to the MR structure so that the current is not concentrated in small portions of the leads. An electrically resistive capping layer can be formed between the leads and the MR structure to distribute the current. The leads can include resistive layers and conductive layers, the resistive layers having a thickness-to-resistivity ratio that is greater than that of each of the conductive layers. The resistive layers may protect the conductive layers during MR structure etching, so that the leads have broad layers of electrically conductive material for connection to MR structures. The broad leads conduct heat better than the read gap material that they replace, further reducing the temperature at the connection between the leads and the MR structure.

摘要翻译： 磁阻（MR）传感器具有与MR结构重叠并且将电流分配到MR结构的引线，使得电流不集中在引线的小部分中。 可以在引线和MR结构之间形成电阻覆盖层以分布电流。 引线可以包括电阻层和导电层，电阻层的厚度 - 电阻率比大于每个导电层的厚度 - 电阻率比。 电阻层可以在MR结构蚀刻期间保护导电层，使得引线具有用于连接到MR结构的宽的导电材料层。 宽引线比它们所替代的读取间隙材料更好地传导热量，进一步降低引线与MR结构之间的连接处的温度。