公开(公告)号：US10930515B2

公开(公告)日：2021-02-23

申请号：US16084992

申请日：2017-03-14

申请人： Md Sabbir Ahmed Khan ,  Jonas Sundqvist ,  Dmitry Suyatin

发明人： Md Sabbir Ahmed Khan ,  Jonas Sundqvist ,  Dmitry Suyatin

IPC分类号： H01L21/3065 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06 ,  H01L21/306 ,  H01L21/308 ,  B82Y10/00 ,  B81C1/00 ,  H01L29/78 ,  B82Y40/00

摘要： The present invention relates to a method for selective etching of a nanostructure (10). The method comprising: providing the nanostructure (10) having a main surface (12) delimited by, in relation to the main surface (12), inclined surfaces (14); and subjecting the nanostructure (10) for a dry etching, wherein the dry etching comprises: subjecting the nanostructure (10) for a low energy particle beam (20) having a direction perpendicular to the main surface (12); whereby a recess (16) in the nanostructure (10) is formed, the recess (16) having its opening at the main surface (12) of the nanostructure (10).

公开(公告)号：US20190080918A1

公开(公告)日：2019-03-14

申请号：US16084992

申请日：2017-03-14

申请人： MD Sabbir Ahmed KHAN ,  Jonas SUNDQVIST ,  Dmitry SUYATIN

发明人： MD Sabbir Ahmed KHAN ,  Jonas SUNDQVIST ,  Dmitry SUYATIN

IPC分类号： H01L21/3065 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78

摘要： The present invention relates to a method for selective etching of a nanostructure (10). The method comprising: providing the nanostructure (10) having a main surface (12) delimited by, in relation to the main surface (12), inclined surfaces (14); and subjecting the nanostructure (10) for a dry etching, wherein the dry etching comprises: subjecting the nanostructure (10) for a low energy particle beam (20) having a direction perpendicular to the main surface (12); whereby a recess (16) in the nanostructure (10) is formed, the recess (16) having its opening at the main surface (12) of the nanostructure (10).