公开(公告)号：US20110146779A1

公开(公告)日：2011-06-23

申请号：US12659955

申请日：2010-03-26

申请人： Edward Yi Chang ,  Kartika Chandra Sahoo ,  Men-Ku Lin ,  Yi-Yao Lu ,  Sheng-Ping Wang

发明人： Edward Yi Chang ,  Kartika Chandra Sahoo ,  Men-Ku Lin ,  Yi-Yao Lu ,  Sheng-Ping Wang

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/0352

CPC分类号： H01L33/22 ,  H01L31/02168 ,  H01L31/0236 ,  Y02E10/50

摘要： The present invention relates to a method for fabricating a sub-wavelength structure layer, including: forming a metal film on a passivation layer, an n-GaN layer or a transparent conductive oxide layer; performing thermal treatment to form self assembled metal nano particles; using the metal nano particles as a mask to remove a partial area of the passivation layer, the n-GaN layer or the transparent conductive oxide layer to form a sub-wavelength structure of which the cross-sectional area increases along the thickness direction of the passivation layer, the n-GaN layer or the transparent conductive oxide layer; and removing the metal nano particles. In addition, the present invention further provides the obtained sub-wavelength structure layer and a photoelectric conversion device using the same.

摘要翻译： 本发明涉及一种制造亚波长结构层的方法，包括：在钝化层，n-GaN层或透明导电氧化物层上形成金属膜; 进行热处理以形成自组装的金属纳米颗粒; 使用金属纳米颗粒作为掩模去除钝化层，n-GaN层或透明导电氧化物层的部分区域，以形成沿着厚度方向的横截面积增加的亚波长结构 钝化层，n-GaN层或透明导电氧化物层; 并去除金属纳米颗粒。 此外，本发明还提供所获得的亚波长结构层和使用其的光电转换装置。