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公开(公告)号:US11967658B2
公开(公告)日:2024-04-23
申请号:US17833886
申请日:2022-06-06
Applicant: FACE INTERNATIONAL CORPORATION
Inventor: Clark D. Boyd , Bradbury R Face , Jeffrey D Shepard
IPC: H01L31/0232 , B60J5/04 , B60L8/00 , B62D25/06 , B62D25/12 , B62D33/02 , H01L31/02 , H01L31/0203 , H01L31/0216 , H01L31/0236 , H01L31/0392 , H01L31/048 , H02S40/22 , H02S40/34 , H02S99/00
CPC classification number: H01L31/02327 , B60J5/04 , B60L8/003 , B62D25/06 , B62D25/12 , B62D33/02 , H01L31/02 , H01L31/0203 , H01L31/02168 , H01L31/0236 , H01L31/0392 , H01L31/048 , H02S40/22 , H02S40/34 , H02S99/00 , Y02T10/7072
Abstract: A method is provided that integrates an autonomous energy harvesting capacity in vehicles in an aesthetically neutral manner. A unique set of structural features combine to implement a hidden energy harvesting system on a surface of the vehicle to provide electrical power to the vehicle, and/or to electrically-powered devices in the vehicle. Color-matched, image-matched and/or texture-matched optical layers are formed over energy harvesting components, including photovoltaic energy collecting components. Optical layers are tuned to scatter selectable wavelengths of electromagnetic energy back in an incident direction while allowing remaining wavelengths of electromagnetic energy to pass through the layers to the energy collecting components below. The layers uniquely implement optical light scattering techniques to make the layers appear opaque when observed from a light incident side, while allowing at least 50%, and as much as 80+%, of the energy impinging on the energy or incident side to pass through the layer.
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公开(公告)号:US11791432B2
公开(公告)日:2023-10-17
申请号:US17182954
申请日:2021-02-23
Applicant: W&WSens Devices, Inc.
Inventor: Shih-Yuan Wang , Shih-Ping Wang
IPC: H01L27/146 , H01L31/0236 , H01L31/0352 , H01L31/18 , H01L27/144 , H04B10/69 , H01L31/02 , H01L31/0232 , H01L31/09 , H01L31/103 , H01L31/028 , H01L31/107 , H04B10/25 , H04B10/40 , H04B10/80 , G02B1/00 , G02B6/42 , H01L31/077 , H01L31/036 , H01L31/075 , H01L31/105
CPC classification number: H01L27/14607 , G02B1/002 , G02B6/4204 , G02B6/428 , H01L27/1443 , H01L27/1446 , H01L27/14625 , H01L31/02 , H01L31/028 , H01L31/02016 , H01L31/0232 , H01L31/0236 , H01L31/02325 , H01L31/02327 , H01L31/02363 , H01L31/02366 , H01L31/036 , H01L31/0352 , H01L31/035218 , H01L31/035281 , H01L31/075 , H01L31/077 , H01L31/09 , H01L31/103 , H01L31/105 , H01L31/107 , H01L31/1075 , H01L31/1804 , H01L31/1808 , H04B10/25 , H04B10/40 , H04B10/691 , H04B10/6971 , H04B10/801 , G02B1/005 , Y02E10/547 , Y02P70/50
Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
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公开(公告)号:US20180138341A1
公开(公告)日:2018-05-17
申请号:US15868601
申请日:2018-01-11
Inventor: Mohamad-Ali HASAN , Michael A. FIDDY , Terence A. GOVEAS
IPC: H01L31/055 , H01L31/0216 , H01L31/054 , H01L31/0352 , H01L31/0236 , H01L31/0232
CPC classification number: H01L31/055 , H01L31/02168 , H01L31/02322 , H01L31/0236 , H01L31/03529 , H01L31/0547 , Y02E10/52
Abstract: A photovoltaic cell includes a junction, formed from an n-type semiconductor material and a p-type semiconductor material, a trench, opening toward the light-incident side of the junction, for trapping reflected light, and two photon conversion layers. A first photon conversion layer, arranged at the light-incident side of the junction, converts photons from a higher energy to a lower energy suitable for absorption by the semiconductor material, and a second photon conversion layer, arranged at the opposite side of the junction, converts photons from a lower energy to a higher energy suitable for absorption by the semiconductor material.
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公开(公告)号:US09972729B2
公开(公告)日:2018-05-15
申请号:US15434373
申请日:2017-02-16
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Kazuhisa Yamamura , Akira Sakamoto , Terumasa Nagano , Yoshitaka Ishikawa , Satoshi Kawai
IPC: H01L31/02 , H01L31/0236 , H01L27/144 , H01L31/028 , H01L31/107 , H01L31/18
CPC classification number: H01L31/02366 , H01L27/1446 , H01L27/1464 , H01L31/0236 , H01L31/02363 , H01L31/028 , H01L31/107 , H01L31/1804 , Y02E10/547
Abstract: A p− type semiconductor substrate 20 has a first principal surface 20a and a second principal surface 20b opposed to each other and includes a photosensitive region 21. The photosensitive region 21 is composed of an n+ type impurity region 23, a p+ type impurity region 25, and a region to be depleted with application of a bias voltage in the p− type semiconductor substrate 20. An irregular asperity 10 is formed in the second principal surface 20b of the p− type semiconductor substrate 20. An accumulation layer 37 is formed on the second principal surface 20b side of the p− type semiconductor substrate 20 and a region in the accumulation layer 37 opposed to the photosensitive region 21 is optically exposed.
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公开(公告)号:US20180127594A1
公开(公告)日:2018-05-10
申请号:US15804809
申请日:2017-11-06
Applicant: President and Fellows of Harvard College
Inventor: Joanna AIZENBERG , Michael AIZENBERG , Sung Hoon KANG , Philseok KIM , Tak Sing WONG
IPC: C09D5/00 , C09D5/16 , H01L31/0236 , A61L15/24 , A61L15/34 , A61L15/42 , A61L15/46 , A61L27/28 , A61L27/34 , A61L27/50 , A61L33/00 , A61L33/06 , C10M105/56 , F28F13/18 , F28F19/02 , B01L3/00 , C08L27/12 , B65D25/14 , F15D1/10 , F15D1/02 , F01D25/18 , B05D5/00 , B05D3/00 , C10M105/54 , B01D69/02 , B05D5/08 , B63B59/04 , B64D15/00 , C02F1/44 , D06M13/00 , E04B1/92 , F01D25/02 , F16L57/00 , H01L31/0216
CPC classification number: C09D5/00 , A61L15/24 , A61L15/34 , A61L15/42 , A61L15/46 , A61L27/28 , A61L27/34 , A61L27/50 , A61L33/0094 , A61L33/064 , A61L2400/12 , B01D69/02 , B01D2325/06 , B01L3/5027 , B01L2300/16 , B05D3/002 , B05D5/00 , B05D5/083 , B63B59/04 , B64D15/00 , B65D25/14 , C02F1/44 , C09D5/16 , C09D5/1656 , C09D5/1681 , C09D5/1693 , C10M105/54 , C10M105/56 , D06M13/00 , E04B1/92 , F01D25/02 , F01D25/18 , F15D1/02 , F15D1/10 , F16L57/00 , F28F13/185 , F28F19/02 , F28F2245/04 , G02B1/14 , H01L31/02167 , H01L31/0236 , Y02W10/37 , Y10T428/24355 , Y10T428/24364 , C08L27/12
Abstract: The present disclosure describes a strategy to create self-healing, slippery liquid-infused porous surfaces. Roughened (e.g., porous) surfaces can be utilized to lock in place a lubricating fluid, referred to herein as Liquid B to repel a wide range of materials, referred to herein as Object A (Solid A or Liquid A). Slippery liquid-infused porous surfaces outperforms other conventional surfaces in its capability to repel various simple and complex liquids (water, hydrocarbons, crude oil and blood), maintain low-contact-angle hysteresis (
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公开(公告)号:US09956743B2
公开(公告)日:2018-05-01
申请号:US13996477
申请日:2011-12-20
Applicant: Sungho Jin , Chulmin Choi
Inventor: Sungho Jin , Chulmin Choi
IPC: B32B7/02 , G03F7/00 , H01L31/0236 , B05D5/00 , B05D5/08 , B81C1/00 , B82Y40/00 , H01L21/308 , H01L21/3065 , B82B3/00 , A01N25/34
CPC classification number: B32B7/02 , A01N25/34 , B05D5/00 , B05D5/08 , B05D5/083 , B81B2203/0361 , B81B2207/11 , B81C1/00111 , B81C1/00206 , B81C1/00404 , B81C1/00428 , B81C1/00531 , B82B3/0038 , B82Y40/00 , G03F7/0002 , H01L21/3065 , H01L21/3086 , H01L31/0236 , H01L31/02366 , Y02E10/50 , Y10T428/249924 , Y10T428/24994
Abstract: Devices, systems and techniques are described for producing and implementing articles and materials having nano-scale and microscale structures that exhibit superhydrophobic, superoleophobic or omniphobic surface properties and other enhanced properties. In one aspect, a surface nanostructure can be formed by adding a silicon-containing buffer layer such as silicon, silicon oxide or silicon nitride layer, followed by metal film deposition and heating to convert the metal film into balled-up, discrete islands to form an etch mask. The buffer layer can be etched using the etch mask to create an array of pillar structures underneath the etch mask, in which the pillar structures have a shape that includes cylinders, negatively tapered rods, or cones and are vertically aligned. In another aspect, a method of fabricating microscale or nanoscale polymer or metal structures on a substrate is made by photolithography and/or nano imprinting lithography.
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公开(公告)号:US09935217B1
公开(公告)日:2018-04-03
申请号:US14315308
申请日:2014-06-25
Applicant: Achyut Kumar Dutta
Inventor: Achyut Kumar Dutta
IPC: H01L31/0352 , H01L31/068 , H01L31/0236 , H01G9/20
CPC classification number: H01L31/02366 , H01G9/2031 , H01G9/2059 , H01L31/0236 , H01L31/02363 , H01L31/0296 , H01L31/0304 , H01L31/035281 , H01L31/07 , H01L31/072 , H01L31/073 , H01L31/0735 , H01L31/18 , H01L31/1804 , H01L31/1828 , H01L31/184 , H01L51/4226 , H01L51/447 , Y02E10/549 , Y02P70/521
Abstract: Novel structures of photovoltaic cells are provided. The cells are based on nanometer or micrometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators, and may be metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications such as in space, commercial, residential and industrial applications.
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公开(公告)号:US20180090568A1
公开(公告)日:2018-03-29
申请号:US15826005
申请日:2017-11-29
Applicant: Advanced Silicon Group, Inc.
Inventor: Brent A. Buchine , Marcie R. Black , Faris Modawar
IPC: H01L29/06 , H01L21/308 , B01J20/28 , B82Y20/00 , B82Y30/00 , C23C14/34 , H01L21/02 , H01M4/38 , H01M4/36 , H01M4/134 , H01M4/04 , H01L31/0352 , H01L31/028 , H01L31/0236 , H01L29/16 , H01L29/04 , H01L21/3213 , B01J20/10 , H01L21/306 , H01L21/285 , H01M4/1395 , H01M4/66 , H01M10/0525 , H01M4/02
CPC classification number: H01L29/0669 , B01J20/10 , B01J20/28007 , B82Y20/00 , B82Y30/00 , C23C14/34 , H01L21/02118 , H01L21/02164 , H01L21/02175 , H01L21/02244 , H01L21/02282 , H01L21/02307 , H01L21/0234 , H01L21/02488 , H01L21/02513 , H01L21/02532 , H01L21/02603 , H01L21/2855 , H01L21/28568 , H01L21/30604 , H01L21/3086 , H01L21/32134 , H01L29/04 , H01L29/0676 , H01L29/16 , H01L31/0236 , H01L31/02363 , H01L31/028 , H01L31/0352 , H01M4/0492 , H01M4/134 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/661 , H01M10/0525 , H01M2004/027 , Y02E10/50 , Y10S977/762
Abstract: A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
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公开(公告)号:US20170374737A1
公开(公告)日:2017-12-28
申请号:US15527261
申请日:2016-07-25
Applicant: LG CHEM, LTD.
Inventor: Hye Won JEONG , Yong Goo SON , Kyungjun KIM , Bo Ra SHIN , Chang Yoon LIM
CPC classification number: H05K1/0393 , B32B15/08 , F21K99/00 , H01B3/30 , H01B5/14 , H01B7/04 , H01B13/00 , H01L31/0236 , H01L51/0023 , H01L51/0097 , H01L51/445 , H01L51/5212 , H01L51/5228 , H05K1/0283 , H05K1/0313 , H05K1/0346 , H05K3/0041 , H05K3/20 , H05K3/207 , H05K2201/0108 , H05K2201/0154 , H05K2201/0317 , H05K2201/10106 , H05K2201/10128 , H05K2203/0156 , H05K2203/0264 , H05K2203/1545 , Y02E10/549 , Y02P20/582
Abstract: The present invention relates to a method for producing a flexible substrate. According to the method of the present invention, a flexible substrate layer can be easily separated from a carrier substrate even without the need for laser or light irradiation so that a device can be prevented from deterioration of reliability and occurrence of defects caused by laser or light irradiation. In addition, according to the method of the present invention, a flexible substrate can be continuously produced in an easier manner based on a roll-to-roll process.
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公开(公告)号:US09837571B2
公开(公告)日:2017-12-05
申请号:US15431817
申请日:2017-02-14
Applicant: International Business Machines Corporation
Inventor: Harold J. Hovel
IPC: H01L31/0725 , H01L31/0236 , H01L31/0352 , H01L31/18 , H01L31/0224
CPC classification number: H01L31/0725 , B82Y20/00 , H01L31/022433 , H01L31/0236 , H01L31/02366 , H01L31/035236 , H01L31/053 , H01L31/0547 , H01L31/0687 , H01L31/0693 , H01L31/18 , H01L31/1884 , Y02E10/52 , Y02E10/544
Abstract: An energy conversion device comprises at least two thin film photovoltaic cells fabricated separately and joined by wafer bonding. The cells are arranged in a hierarchical stack of decreasing order of their energy bandgap from top to bottom. Each of the thin film cells has a thickness in the range from about 0.5 μm to about 10 μm. The photovoltaic cell stack is mounted upon a thick substrate composed of a material selected from silicon, glass, quartz, silica, alumina, ceramic, metal, graphite, and plastic. Each of the interfaces between the cells comprises a structure selected from a tunnel junction, a heterojunction, a transparent conducting oxide, and an alloying metal grid; and the top surface and/or the lower surface of the energy conversion device may contain light-trapping means.
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