公开(公告)号：US06313434B1

公开(公告)日：2001-11-06

申请号：US09321799

申请日：1999-05-27

申请人： Daniel G. Patterson ,  Michael A. Kadar-Kallen

发明人： Daniel G. Patterson ,  Michael A. Kadar-Kallen

IPC分类号： B23K2636

CPC分类号： B23K26/08 ,  B23K26/02 ,  B23K26/082 ,  B23K26/361

摘要： A system for controlling inclination and depth of ablation of a polymer planar waveguide or semiconductor wafer substrate utilizes a laser which directs the beam at the substrate to ablate portions of the surface thereof and a translatable stage for moving the substrate relative to the beam to create a path of ablated material from the surface. The velocity of the substrate is controlled relative to ablation rate of material from the surface or the dimension of the beam is controlled along the path of ablated material to create a desired inclination and depth of ablated material in the path. The depth of ablated material is a function of the beam width along the path of ablated material, workpiece velocity and ablation rate and is substantially controlled by the formula: D=R(W/V) where D is the depth of ablated material, R is ablation rate, W is beam dimension along the path of ablated material, and V is workpiece velocity.

摘要翻译： 用于控制聚合物平面波导或半导体晶片衬底的消融倾斜度和深度的系统利用一种激光器，该激光器将衬底上的光束引导到其表面的部分，以及用于使衬底相对于光束移动的平移台， 从表面烧蚀材料的路径。 衬底的速度相对于来自表面的材料的消融速率受到控制，或者沿着烧蚀材料的路径控制梁的尺寸，以产生在路径中烧蚀的材料的期望的倾斜度和深度。 消融材料的深度是沿着烧蚀材料，工件速度和烧蚀速率的路径的波束宽度的函数，并且基本上由以下公式控制：其中D是烧蚀材料的深度，R是烧蚀速率，W是光束尺寸 沿着烧蚀材料的路径，V是工件的速度。