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公开(公告)号:US08575718B2
公开(公告)日:2013-11-05
申请号:US13289529
申请日:2011-11-04
申请人: Michael J. Abou-Khalil , Robert J. Gauthier, Jr. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam , William Tonti
发明人: Michael J. Abou-Khalil , Robert J. Gauthier, Jr. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam , William Tonti
CPC分类号: H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要: The present invention relates to e-fuse devices, and more particularly to a device and method of forming an e-fuse device, the method comprising providing a first conductive layer connected to a second conductive layer, the first and second conductive layers separated by a barrier layer having a first diffusivity different than a second diffusivity of the first conductive layer. A void is created in the first conductive layer by driving an electrical current through the e-fuse device.
摘要翻译: 本发明涉及电熔丝装置,更具体地说,涉及一种形成电熔丝装置的装置和方法,所述方法包括提供连接到第二导电层的第一导电层,所述第一和第二导电层由 阻挡层具有与第一导电层的第二扩散率不同的第一扩散率。 通过驱动电流通过电熔丝装置而在第一导电层中产生空隙。
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公开(公告)号:US20120049321A1
公开(公告)日:2012-03-01
申请号:US13289529
申请日:2011-11-04
申请人: Michael J. Abou-Khalil , Robert J. Gauthier, JR. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam , William Tonti
发明人: Michael J. Abou-Khalil , Robert J. Gauthier, JR. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam , William Tonti
IPC分类号: H01L23/525 , H01L21/326
CPC分类号: H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要: The present invention relates to e-fuse devices, and more particularly to a device and method of forming an e-fuse device, the method comprising providing a first conductive layer connected to a second conductive layer, the first and second conductive layers separated by a barrier layer having a first diffusivity different than a second diffusivity of the first conductive layer. A void is created in the first conductive layer by driving an electrical current through the e-fuse device.
摘要翻译: 本发明涉及电熔丝装置,更具体地说,涉及一种形成电熔丝装置的装置和方法,所述方法包括提供连接到第二导电层的第一导电层,所述第一和第二导电层由 阻挡层具有与第一导电层的第二扩散率不同的第一扩散率。 通过驱动电流通过电熔丝装置而在第一导电层中产生空隙。
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