公开(公告)号：US5999886A

公开(公告)日：1999-12-07

申请号：US923492

申请日：1997-09-05

申请人： Michel A. Martin ,  Richard J. Markle ,  James K. Fidler

发明人： Michel A. Martin ,  Richard J. Markle ,  James K. Fidler

IPC分类号： G01N33/00 ,  G01N27/00

CPC分类号： G01N33/0062

摘要： A measurement system is presented for detecting the presence of one or more harmful chemical species within one or more chambers of a semiconductor wafer processing device. Chemical species of interest include oxygen (O.sub.2), nitrogen (N.sub.2), moisture (H.sub.2 O), and organic compounds associated with photoresist processing. Such organic compounds include isopropyl alcohol (CH.sub.3 CH(OH)CH.sub.3), acetone (CH.sub.3 COCH.sub.3), and ethyl-3-ethoxy propionate (C.sub.7 H.sub.14 O.sub.3). Candidate semiconductor wafer processing devices include evaporation, sputtering, and low pressure chemical vapor deposition (LPCVD) devices. The measurement system measures the concentrations of chemical species within each monitored chamber of the semiconductor wafer processing device: (i) during the processing of semiconductor wafers within the semiconductor wafer processing device, and (ii) during recovery periods following preventive maintenance or repair activities performed upon the semiconductor wafer processing device. Performing measurements during recovery periods aids in returning the semiconductor wafer processing device to service following preventive maintenance or repair activities. Data collection is not performed at other times (e.g., when the semiconductor wafer processing device is idle) in order to reduce data storage requirements. The measurement system includes one or more ambient sampling sensors coupled to a data collection computer through a control interface. Each ambient sampling sensor is in gaseous communication with ambients within the one or more monitored chambers. The control interface triggers data collection during the processing of one or more semiconductor wafers within the semiconductor wafer processing device, and following a maintenance activity performed upon the semiconductor wafer processing device.

摘要翻译： 提供了一种用于检测在半导体晶片处理装置的一个或多个室内存在一种或多种有害化学物质的测量系统。 感兴趣的化学物质包括氧（O 2），氮（N 2），水分（H 2 O）和与光致抗蚀剂加工相关的有机化合物。 这些有机化合物包括异丙醇（CH 3 CH（OH）CH 3），丙酮（CH 3 COCH 3）和乙基-3-乙氧基丙酸酯（C 7 H 14 O 3）。 候选半导体晶片处理装置包括蒸发，溅射和低压化学气相沉积（LPCVD）装置。 测量系统测量半导体晶片处理装置的每个监测室内的化学物质的浓度：（i）在半导体晶片处理装置内的半导体晶片的处理期间，以及（ii）在执行预防性维护或修复活动之后的恢复期间 在半导体晶片处理装置上。 在恢复期间执行测量有助于将半导体晶片处理装置返回到维修之后进行预防性维护或维修活动。 在其他时间（例如当半导体晶片处理装置空闲时）不进行数据收集，以便减少数据存储要求。 测量系统包括通过控制接口耦合到数据采集计算机的一个或多个环境采样传感器。 每个环境采样传感器与一个或多个监测室内的环境气态连通。 控制接口在半导体晶片处理装置内的一个或多个半导体晶片的处理期间触发数据收集，并且跟随在半导体晶片处理装置上执行的维护活动。