公开(公告)号：US5851925A

公开(公告)日：1998-12-22

申请号：US678390

申请日：1996-07-02

申请人： Michelle Beh ,  Donald Grant

发明人： Michelle Beh ,  Donald Grant

IPC分类号： G01N1/30 ,  G01N1/32 ,  G01R31/311 ,  H01L21/00

CPC分类号： G01N1/32 ,  G01R31/311 ,  G01N1/30

摘要： A method for staining a wafer containing a semiconductor device is disclosed which properly delineates the various layers of the semiconductor device and provides good contrast for proper testing and diagnosis of problems using a scanning electron microscope. After grinding, lapping and polishing a surface of the semiconductor device, the surface is ion beam etched, reactive ion etched and stained. The staining solution is made from 1 part by volume hydrofluoric acid, 3 parts by volume nitric acid, and 6 parts by volume acetic acid. The staining solution is cooled and subjected to a light to slow the reaction of the staining solution with the semiconductor device. This prevents structure collapse and under or over etching, and provides an easily controllable staining process.

摘要翻译： 公开了一种用于对包含半导体器件的晶片进行染色的方法，其适当地描绘半导体器件的各个层并且提供良好的对比度以用于使用扫描电子显微镜的问题的适当测试和诊断。 研磨后，研磨和抛光半导体器件的表面，表面被离子束蚀刻，反应离子蚀刻和染色。 染色溶液由1体积份氢氟酸，3体积份硝酸和6体积份乙酸制成。 将染色溶液冷却并经受光照，以减缓染色溶液与半导体器件的反应。 这样可以防止结构塌陷和不足或过刻蚀，并提供易于控制的染色工艺。