公开(公告)号：US20090221144A1

公开(公告)日：2009-09-03

申请号：US12073243

申请日：2008-03-03

Applicant: Ming-Hsin Cheng ,  Shih-Chiang Huang ,  Wei-Xin Ni ,  Guang-Li Luo

Inventor： Ming-Hsin Cheng ,  Shih-Chiang Huang ,  Wei-Xin Ni ,  Guang-Li Luo

IPC: H01L21/4763

CPC classification number: H01L29/127 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  H01L29/16

Abstract: Manufacturing methods for nano scale Ge include: Form dielectric layer on the substrate surface, then etch the dielectric layer to form openings of three different dimensions, then use chemical vapor deposition process to deposit Ge metal layer to cover the substrate, dielectric layer and the openings; then on the opening of three different dimensions, nano-dot, nano-disk and nano-ring are formed.

Abstract translation: 纳米尺度Ge的制造方法包括：在基板表面上形成介电层，然后蚀刻介电层以形成三个不同尺寸的开口，然后使用化学气相沉积工艺沉积Ge金属层以覆盖基板，电介质层和开口 ; 然后在三个不同尺寸的开口处形成纳米点，纳米盘和纳米环。

公开(公告)号：US07140210B2

公开(公告)日：2006-11-28

申请号：US10945494

申请日：2004-09-21

Applicant: Ming-Hsin Cheng

Inventor： Ming-Hsin Cheng

IPC: E05B69/00

CPC classification number: E05B73/0005 ,  E05B37/025 ,  Y10T70/40 ,  Y10T70/435 ,  Y10T70/5009

Abstract: A lock has a housing with a hole. A lock post has an interior end fixed in the housing and an exterior end extruded out of the housing via the hole. The lock post has a lock portion at the exterior end thereof. Two close posts have interior ends received in the housing and a plate is connected to the interior ends. The close posts are movable relative to the lock post. A control device is provided to the housing for manipulation to move the close posts. An elastic device is provided in the housing with opposite ends against the housing and the plate. A lock mechanism is provided to the housing to be switched between an unlock condition, in which the close posts are free for movement, and a lock condition, in which the close posts are exterior ends thereof extruded out of the housing and are secured threat.

Abstract translation: 锁具有带孔的外壳。 锁定柱具有固定在壳体中的内部端部，并且外部端部经由孔挤出外壳。 锁定柱在其外端具有锁定部分。 两个密封柱具有容纳在壳体中的内部端部，并且板件连接到内部端部。 关闭柱相对于锁柱可移动。 控制装置被提供到壳体以用于移动关闭柱。 弹性装置设置在壳体中，相对的端部抵靠壳体和板。 锁定机构设置在壳体上，以在闭合位置可自由运动的解锁状态和锁定状态之间进行切换，其中闭合柱的外部端部被挤出外壳并受到威胁。

公开(公告)号：US20060027002A1

公开(公告)日：2006-02-09

申请号：US10945494

申请日：2004-09-21

Applicant: Ming-Hsin Cheng

Inventor： Ming-Hsin Cheng

IPC: E05B73/00

CPC classification number: E05B73/0005 ,  E05B37/025 ,  Y10T70/40 ,  Y10T70/435 ,  Y10T70/5009

Abstract: A lock has a housing with a hole. A lock post has an interior end fixed in the housing and an exterior end extruded out of the housing via the hole. The lock post has a lock portion at the exterior end thereof. Two close posts have interior ends received in the housing and a plate is connected to the interior ends. The close posts are movable relative to the lock post. A control device is provided to the housing for manipulation to move the close posts. An elastic device is provided in the housing with opposite ends against the housing and the plate. A lock mechanism is provided to the housing to be switched between an unlock condition, in which the close posts are free for movement, and a lock condition, in which the close posts are exterior ends thereof extruded out of the housing and are secured thereat.

Abstract translation: 锁具有带孔的外壳。 锁定柱具有固定在壳体中的内部端部，并且外部端部经由孔挤出外壳。 锁定柱在其外端具有锁定部分。 两个密封柱具有容纳在壳体中的内部端部，并且板件连接到内部端部。 关闭柱相对于锁柱可移动。 控制装置被提供到壳体以用于移动关闭柱。 弹性装置设置在壳体中，相对的端部抵靠壳体和板。 锁定机构被提供到壳体，以在闭合位置自由运动的解锁状态和锁定状态之间进行切换，其中闭合柱的外端部从壳体挤出并固定在其上。

公开(公告)号：US07851378B2

公开(公告)日：2010-12-14

申请号：US11898345

申请日：2007-09-11

Applicant: Ming-Hsin Cheng ,  Shih-Chiang Huang ,  Tsung-Chieh Cheng ,  Guang-Li Luo ,  Chinq-Long Hsu

Inventor： Ming-Hsin Cheng ,  Shih-Chiang Huang ,  Tsung-Chieh Cheng ,  Guang-Li Luo ,  Chinq-Long Hsu

IPC: H01L21/02 ,  H01L21/20

CPC classification number: H01L21/0245 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639

Abstract: A Ge epitaxial layer is grown on a silicon substrate with a patterned structure. Through a cyclic annealing, dislocation defects are confined. The present invention provides a method for manufacturing a high-quality Ge epitaxial layer with a low cost and a simple procedure. The Ge epitaxial layer obtained can be applied to high mobility Ge devices or any lattice-mismatched epitaxy on a photonics device.

Abstract translation: 在具有图案化结构的硅衬底上生长Ge外延层。 通过循环退火，限位缺陷。 本发明提供一种以低成本和简单的方法制造高质量Ge外延层的方法。 获得的Ge外延层可以应用于高迁移率Ge器件或光子器件上的任何晶格失配外延。

公开(公告)号：US20100216298A1

公开(公告)日：2010-08-26

申请号：US11898345

申请日：2007-09-11

Applicant: Ming-Hsin Cheng ,  Shih-Chiang Huang ,  Tsung-Chieh Cheng ,  Guang-Li Luo ,  Chinq-Long Hsu

Inventor： Ming-Hsin Cheng ,  Shih-Chiang Huang ,  Tsung-Chieh Cheng ,  Guang-Li Luo ,  Chinq-Long Hsu

IPC: H01L21/20

CPC classification number: H01L21/0245 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639

Abstract: A Ge epitaxial layer is grown on a silicon substrate with a patterned structure. Through a cyclic annealing, dislocation defects are confined. The present invention provides a method for manufacturing a high-quality Ge epitaxial layer with a low cost and a simple procedure. The Ge epitaxial layer obtained can be applied to high mobility Ge devices or any lattice-mismatched epitaxy on a photonics device.