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公开(公告)号：US4590149A
公开(公告)日：1986-05-20
申请号：US672763
申请日：1984-11-19
申请人： Hisashi Nakane , Akira Yokota , Mitsuo Yabuta , Minoru Tsuda , Wataru Ishii
发明人： Hisashi Nakane , Akira Yokota , Mitsuo Yabuta , Minoru Tsuda , Wataru Ishii
CPC分类号： G03F7/36 , Y10S430/168
摘要： A method for high-fidelity fine patterning of a photoresist layer involving a dry-process development by exposure to a plasma gas. Following irradiation in a pattern with actinic rays, a photoresist layer coated on a substrate is heated in an atmosphere at 200.degree. to 500.degree. C. Subsequent exposure of the photoresist layer to a plasma gas gives a finely patterned resist layer with a very high residual film ratio or very small decrease in the film thickness.
摘要翻译： 涉及通过暴露于等离子体气体的干法显影的光致抗蚀剂层的高保真精细图案化的方法。 在用光化射线照射之后，涂覆在基片上的光致抗蚀剂层在200℃至500℃的气氛中加热。随后将光致抗蚀剂层暴露于等离子体气体，得到精细图案化的抗蚀剂层，具有非常高的残留 膜比或膜厚度的非常小的降低。
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公开(公告)号：US4588675A
公开(公告)日：1986-05-13
申请号：US672764
申请日：1984-11-19
申请人： Hisashi Nakane , Akira Yokota , Mitsuo Yabuta , Wataru Ishii
发明人： Hisashi Nakane , Akira Yokota , Mitsuo Yabuta , Wataru Ishii
CPC分类号： G03F7/36 , G03F7/38 , Y10S430/168
摘要： A method for high fidelity patterning of a photoresist layer involving a dry-process development by exposure to a plasma gas. A photoresist layer which had been irradiated in a pattern with actinic rays is heated at a temperature in the range from 200.degree. to 500.degree. C. by applying heat to the surface of the substrate opposite to the surface bearing the photoresist layer, for example, by placing the substrate on a hot plate with the uncoated surface in contact with the hot plate. Subsequent exposure to plasma gas gives a patterned resist layer with a very high residual film thickness.
摘要翻译： 涉及通过暴露于等离子体气体的干法显影的光致抗蚀剂层的高保真图案化的方法。 用光化射线照射的光致抗蚀剂层在200〜500℃的温度范围内，通过向与该光致抗蚀剂层的表面相反的表面施加热，例如， 通过将基板放置在热板上，使未涂覆的表面与热板接触。 随后暴露于等离子体气体得到具有非常高的残余膜厚度的图案化抗蚀剂层。
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