公开(公告)号：US20080081130A1

公开(公告)日：2008-04-03

申请号：US11537418

申请日：2006-09-29

申请人： Moretza Farnia ,  Mehran Moalem

发明人： Moretza Farnia ,  Mehran Moalem

IPC分类号： H05H1/24

CPC分类号： C23C16/30 ,  C23C16/4412 ,  H01J37/32844 ,  Y02C20/30

摘要： A substrate processing apparatus exposes a substrate in a process zone of a process chamber to a plasma of a precursor gas comprising a hydrocarbon gas to deposit carbon-doped silicon on the substrate. An effluent comprising unreacted precursor gas and byproducts from the carbon-doped silicon deposition process is exhausted from the process zone and passed into an effluent treatment zone of an effluent treatment reactor. An additive gas comprising an oxygen-containing gas is added to the effluent treatment zone and a plasma is formed of the effluent and additive gas to treat the effluent to reduce the content of unreacted precursor gas and byproduct in the effluent.

摘要翻译： 衬底处理设备将处理室的处理区中的衬底暴露于包含烃气体的前体气体的等离子体以在衬底上沉积碳掺杂的硅。 包含未反应的前体气体和来自碳掺杂硅沉积工艺的副产物的流出物从处理区排出并进入流出物处理反应器的流出物处理区。 将包含含氧气体的添加气体加入到流出物处理区域中，并且由流出物和添加剂气体形成等离子体以处理流出物以降低流出物中未反应的前体气体和副产物的含量。