公开(公告)号：US08461618B2

公开(公告)日：2013-06-11

申请号：US13185219

申请日：2011-07-18

申请人： Akinori Mizogami ,  Takanori Sonoda ,  Masahiko Sakata ,  Yoshimi Tanimoto ,  Motoi Nagamori ,  Daigaku Kimura

发明人： Akinori Mizogami ,  Takanori Sonoda ,  Masahiko Sakata ,  Yoshimi Tanimoto ,  Motoi Nagamori ,  Daigaku Kimura

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/145 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016

摘要： A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film. The semiconductor light-emitting device further includes an n-side electrode located above the n-type semiconductor layer in an exposed section and electrically connected to the n-type semiconductor layer, and a p-side electrode located on the second transparent conductive film above the insulation film and electrically connected to the p-type semiconductor layer.

摘要翻译： 半导体发光器件包括衬底，位于衬底上方的n型半导体层，位于n型半导体层上的半导体发光层，位于半导体发光层上的p型半导体层 。 半导体发光装置还包括位于未曝光部分中的p型半导体层的一部分上的绝缘膜，位于绝缘膜不位于基本上整个p型半导体层的第一透明导电膜 以及位于绝缘膜和第一透明导电膜上的第二透明导电膜。 半导体发光装置还包括位于暴露部分中并与n型半导体层电连接的n型半导体层上方的n侧电极和位于上述第二透明导电膜上的p侧电极 绝缘膜并与p型半导体层电连接。

公开(公告)号：US20120018765A1

公开(公告)日：2012-01-26

申请号：US13185219

申请日：2011-07-18

申请人： Akinori MIZOGAMI ,  Takanori SONODA ,  Masahiko SAKATA ,  Yoshimi TANIMOTO ,  Motoi NAGAMORI ,  Daigaku KIMURA

发明人： Akinori MIZOGAMI ,  Takanori SONODA ,  Masahiko SAKATA ,  Yoshimi TANIMOTO ,  Motoi NAGAMORI ,  Daigaku KIMURA

IPC分类号： H01L33/62

CPC分类号： H01L33/42 ,  H01L33/145 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016

摘要： A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film. The semiconductor light-emitting device further includes an n-side electrode located above the n-type semiconductor layer in an exposed section and electrically connected to the n-type semiconductor layer, and a p-side electrode located on the second transparent conductive film above the insulation film and electrically connected to the p-type semiconductor layer.

摘要翻译： 半导体发光器件包括衬底，位于衬底上方的n型半导体层，位于n型半导体层上的半导体发光层，位于半导体发光层上的p型半导体层 。 半导体发光装置还包括位于未曝光部分中的p型半导体层的一部分上的绝缘膜，位于绝缘膜不位于基本上整个p型半导体层的第一透明导电膜 以及位于绝缘膜和第一透明导电膜上的第二透明导电膜。 半导体发光装置还包括位于暴露部分中并与n型半导体层电连接的n型半导体层上方的n侧电极和位于上述第二透明导电膜上的p侧电极 绝缘膜并与p型半导体层电连接。