公开(公告)号：US5242505A

公开(公告)日：1993-09-07

申请号：US800918

申请日：1991-12-03

申请人： Guang H. Lin ,  Mu Z. He ,  Mridula Kapur ,  John O'M. Bockris

发明人： Guang H. Lin ,  Mu Z. He ,  Mridula Kapur ,  John O'M. Bockris

IPC分类号： H01L31/032 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/0392 ,  H01L31/0324 ,  H01L31/075 ,  Y02E10/548 ,  Y10T428/12528

摘要： Alloys of amorphous silicon with Group VIa elements are disclosed that form high-quality materials for photovoltaic cells that are resistant to Staebler-Wronski photodegradation. Also disclosed are methods for manufacturing the alloys. The alloys can be formed as films on solid-state substrates by reacting silane gas and at least one alloying gas (H.sub.2 M, wherein M is an element from Group VIa of the periodic table), preferably with hydrogen dilution, by a glow-discharge method such as plasma-enhanced chemical vapor deposition. The alloys can have an optical bandgap energy from about 1.0 eV to about 2.3 eV, as determined by selecting one or more different Group VIa elements for alloying or by changing the concentration(s) of the alloying element(s) in the alloy. The alloys exhibit excellent light-to-dark conductivity ratios, excellent structural quality, and resistance to Staebler-Wronski degradation. They can be used as "i" type or doped for use as "p" or "n" type materials.

摘要翻译： 公开了具有VIa族元素的非晶硅的合金，其形成了抵抗Staebler-Wronski光降解的用于光伏电池的高质量材料。 还公开了用于制造合金的方法。 合金可以通过硅烷气体和至少一种合金气体（H 2 M，其中M是元素周期表VIa中的元素），优选用氢稀释法，通过辉光放电法 例如等离子体增强化学气相沉积。 通过选择合金化中的一种或多种不同的VIa族元素或通过改变合金中的合金元素的浓度来确定，合金可以具有约1.0eV至约2.3eV的光学带隙能。 该合金表现出优异的光 - 暗电导率，优异的结构质量和耐Stellbler-Wronski降解性能。 它们可以用作“i”型或掺杂用作“p”或“n”型材料。