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公开(公告)号:US12087871B2
公开(公告)日:2024-09-10
申请号:US18385213
申请日:2023-10-30
发明人: Shih-Yuan Wang , Shih-Ping Wang
IPC分类号: H01L31/0236 , G02B6/122 , G02B6/136 , H01L23/66 , H01L31/02 , H01L31/0224 , H01L31/0232 , H01L31/024 , H01L31/028 , H01L31/0304 , H01L31/0312 , H01L31/0352 , H01L31/036 , H01L31/054 , H01L31/0745 , H01L31/075 , H01L31/077 , H01L31/105 , H01L31/107 , H01L31/18 , G02B6/12
CPC分类号: H01L31/035272 , G02B6/122 , G02B6/136 , H01L23/66 , H01L31/02005 , H01L31/02016 , H01L31/02019 , H01L31/022408 , H01L31/022475 , H01L31/02327 , H01L31/02363 , H01L31/024 , H01L31/028 , H01L31/0284 , H01L31/0304 , H01L31/03046 , H01L31/0312 , H01L31/035209 , H01L31/035227 , H01L31/035281 , H01L31/036 , H01L31/054 , H01L31/0745 , H01L31/075 , H01L31/077 , H01L31/105 , H01L31/1055 , H01L31/107 , H01L31/1075 , H01L31/1804 , H01L31/1808 , H01L31/1812 , H01L31/184 , H01L31/1844 , G02B2006/12097 , G02B2006/12176 , H01L2223/6627 , Y02E10/52 , Y02E10/548
摘要: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
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公开(公告)号:US10084107B2
公开(公告)日:2018-09-25
申请号:US14954831
申请日:2015-11-30
发明人: Jianming Fu , Zheng Xu , Jiunn Benjamin Heng , Chentao Yu
IPC分类号: H01L31/074 , H01L31/0216 , H01L31/18 , H01L31/0224 , H01L31/072 , H01L31/075
CPC分类号: H01L31/074 , H01L31/02167 , H01L31/022466 , H01L31/022475 , H01L31/072 , H01L31/075 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要: One embodiment of the present invention provides a solar cell. The solar cell includes a Si base layer, a passivation layer situated above the Si base layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a first transparent-conducting-oxide (TCO) layer situated above the heavily doped a-Si layer, a back-side electrode situated below the Si base layer, and a front-side electrode situated above the first TCO layer. The first TCO layer comprises at least one of: GaInO, GaInSnO, ZnInO, and ZnInSnO.
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公开(公告)号:US20180244528A1
公开(公告)日:2018-08-30
申请号:US15965206
申请日:2018-04-27
IPC分类号: C01B33/02 , H01L31/0376
CPC分类号: C01B33/02 , H01L31/03762 , Y02E10/548
摘要: This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.
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公开(公告)号:US20180190853A1
公开(公告)日:2018-07-05
申请号:US15846463
申请日:2017-12-19
发明人: MIN-HUNG LEE , CHIH-YU CHEN , GING-RUE LIOU , SHU-TONG CHANG
IPC分类号: H01L31/0747 , H01L31/18
CPC分类号: H01L31/0747 , H01L31/1804 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要: A Heterojunction with Intrinsic Thin layer (HIT) solar cell has a crystalline Si substrate, an intrinsic amorphous Si layer, a doped amorphous Si layer, a transparent conductive layer and two electrode layers. The intrinsic amorphous Si layer disposed between the doped amorphous Si layer and the crystalline silicon substrate contacts the doped amorphous Si layer and the crystalline silicon substrate. Each of the intrinsic amorphous Si layer and the doped amorphous Si layer has the thickness less than 50 nm. The intrinsic amorphous Si layer and the doped amorphous Si layer are both made by electron beam evaporation. The transparent conductive layer is formed on the doped amorphous Si layer. The two electrode layers are formed on the transparent conductive layer and the crystalline silicon substrate respectively. The crystalline silicon substrate is disposed between the two electrode layers.
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公开(公告)号:US20180175225A1
公开(公告)日:2018-06-21
申请号:US15894690
申请日:2018-02-12
发明人: SHUN-MING CHEN , CHIEN-CHIH HUANG , JOEL P. DESOUZA , AUGUSTIN J. HONG , JEEHWAN KIM , CHIEN-YEH KU , DEVENDRA K. SADANA , CHUAN-WEN WANG
IPC分类号: H01L31/0224 , H01L31/075 , H01L31/18 , H01L31/0392
CPC分类号: H01L31/022483 , H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1884 , Y02E10/548
摘要: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
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公开(公告)号:US20180145196A1
公开(公告)日:2018-05-24
申请号:US15821026
申请日:2017-11-22
申请人: LG Electronics Inc.
发明人: Jungmin HA , Sungyeon CHO , Sangwook PARK
IPC分类号: H01L31/048 , H01L31/0236 , H01L31/0352 , H01L31/18
CPC分类号: H01L31/048 , H01L31/022425 , H01L31/02363 , H01L31/0352 , H01L31/03685 , H01L31/0747 , H01L31/1824 , H01L31/1868 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要: Disclosed is a solar cell including a semiconductor substrate having a first surface and a second surface that is opposite the first surface, each of which includes a first edge area, a second edge area, and a cell area located between the first and second edge areas, a first passivation layer formed on the cell area of the first surface of the semiconductor substrate, a first conductive semiconductor layer disposed on the first passivation layer, and a first electrode disposed on the first conductive semiconductor layer. The first edge area of the first surface of the semiconductor substrate is exposed.
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公开(公告)号:US09966486B2
公开(公告)日:2018-05-08
申请号:US14123462
申请日:2012-05-30
申请人: Kyung Eun Park
发明人: Kyung Eun Park
IPC分类号: H01L31/0352 , H01L31/032 , H01L31/068 , H01L31/0749 , H01L31/075 , H01L31/061 , H01L31/0468 , H01L31/18
CPC分类号: H01L31/035281 , H01L31/0322 , H01L31/0468 , H01L31/061 , H01L31/068 , H01L31/0749 , H01L31/075 , H01L31/1804 , H01L31/1884 , Y02E10/541 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要: Disclosed are a solar cell apparatus and a method of fabricating the same. The solar cell apparatus includes a substrate, a first electrode layer on the substrate, a plurality of light absorbing columns on the first electrode layer, and a second electrode layer on the light absorbing columns.
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公开(公告)号:US09911892B2
公开(公告)日:2018-03-06
申请号:US14370598
申请日:2013-01-03
申请人: Linwei Yu , Pere Roca I Cabarrocas
发明人: Linwei Yu , Pere Roca I Cabarrocas
IPC分类号: H01L31/042 , H01L31/075 , B82Y40/00 , H01L21/00 , H01L21/20 , H01L31/18 , B82Y10/00 , H01L21/02 , H01L31/0352 , H01L29/06 , H01L29/16 , H01L29/161 , H01L29/24 , H01L31/077 , H01L29/167 , B82Y30/00
CPC分类号: H01L31/182 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02422 , H01L21/02472 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/0676 , H01L29/068 , H01L29/16 , H01L29/161 , H01L29/167 , H01L29/24 , H01L31/035227 , H01L31/035272 , H01L31/035281 , H01L31/075 , H01L31/077 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要: A method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate, includes: a) forming on the substrate, metal aggregates capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires in the presence of one or more non-dopant precursor gases of the first semiconductor material, the substrate being heated to a temperature at which the metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires in the vapor phase being catalyzed by the metal aggregates; c) rendering the residual metal aggregates inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between the nanowire and the at least one doped thin film.
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公开(公告)号:US09911888B2
公开(公告)日:2018-03-06
申请号:US14976798
申请日:2015-12-21
IPC分类号: H01L29/04 , H01L29/10 , H01L31/00 , H01L31/077 , C23C16/50 , H01L31/20 , H01L21/02 , C23C16/02 , H01L31/0216 , H01L31/0368 , H01L31/0376 , H01L31/0392 , C23C16/455 , C23C16/515 , H01L31/0224 , H01L31/065 , H01L31/18 , H01L31/056
CPC分类号: H01L31/077 , C23C16/0272 , C23C16/45523 , C23C16/45557 , C23C16/50 , C23C16/515 , H01L21/02532 , H01L21/0262 , H01L31/02167 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/03682 , H01L31/03687 , H01L31/03762 , H01L31/03921 , H01L31/056 , H01L31/065 , H01L31/1816 , H01L31/20 , Y02E10/52 , Y02E10/546 , Y02E10/548
摘要: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.
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公开(公告)号:US20180013021A1
公开(公告)日:2018-01-11
申请号:US15706605
申请日:2017-09-15
发明人: Motohide KAI
IPC分类号: H01L31/0376 , H01L31/0236 , H01L31/0216 , H01L31/0224 , H01L31/20 , H01L31/0747
CPC分类号: H01L31/03762 , H01L31/02167 , H01L31/02168 , H01L31/022441 , H01L31/02363 , H01L31/0747 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要: A solar cell includes: a semiconductor substrate formed of n-type crystalline silicon; a first stack formed of amorphous silicon in a first region on a first principle surface of the semiconductor substrate; a second stack formed of amorphous silicon in a second region different from the first region on the first principle surface; and a third stack formed of amorphous silicon on a second principle surface of the semiconductor substrate opposite from the first principle surface. The second stack has an oxygen concentration that is higher than that of the first stack.
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