METHOD FOR MANUFACTURING HETEROJUNCTION WITH INTRINSIC THIN LAYER SOLAR CELL

    公开(公告)号:US20180190853A1

    公开(公告)日:2018-07-05

    申请号:US15846463

    申请日:2017-12-19

    IPC分类号: H01L31/0747 H01L31/18

    摘要: A Heterojunction with Intrinsic Thin layer (HIT) solar cell has a crystalline Si substrate, an intrinsic amorphous Si layer, a doped amorphous Si layer, a transparent conductive layer and two electrode layers. The intrinsic amorphous Si layer disposed between the doped amorphous Si layer and the crystalline silicon substrate contacts the doped amorphous Si layer and the crystalline silicon substrate. Each of the intrinsic amorphous Si layer and the doped amorphous Si layer has the thickness less than 50 nm. The intrinsic amorphous Si layer and the doped amorphous Si layer are both made by electron beam evaporation. The transparent conductive layer is formed on the doped amorphous Si layer. The two electrode layers are formed on the transparent conductive layer and the crystalline silicon substrate respectively. The crystalline silicon substrate is disposed between the two electrode layers.