公开(公告)号：US20090008241A1

公开(公告)日：2009-01-08

申请号：US12167361

申请日：2008-07-03

申请人： Fu-Hsing Lu ,  Jiun-Huei Yang ,  Po-Lun Wu ,  Mu-Hsuan Chan

发明人： Fu-Hsing Lu ,  Jiun-Huei Yang ,  Po-Lun Wu ,  Mu-Hsuan Chan

IPC分类号： C23C14/34

CPC分类号： C23C14/0641

摘要： A method for forming a metallic nitride film includes the steps of a) providing a target made of titanium or zirconium and a substrate in a vacuum chamber, and b) forming a metallic film, which is a TiN film or a ZrN film, on a surface of the substrate by sputtering deposition under the conditions of maintaining a working pressure of the vacuum chamber in a range of 5×10−4 Torr to 5×10−2 Torr; introducing a gas mixture of air and argon into the vacuum chamber at a flow rate ratio of the air to the argon ranging from 5:100 to 15:100, and applying a direct current power ranging from 100 Watts to 5000 Watts by a power supply. Because air can be conveniently collected and the requirement of the base pressure is lower than that of a prior art method, the method of the present invention has the advantages of simple equipment requirement, time-effective manufacturing processes and low cost.

摘要翻译： 一种形成金属氮化物膜的方法包括以下步骤：a）在真空室中提供由钛或锆制成的靶和基底，b）在TiN膜或ZrN膜上形成金属膜 在将真空室的工作压力维持在5×10 -4 Torr至5×10 -2 Torr的范围内的溅射沉积的基板的表面上; 将空气和氩气的气体混合物以5：100至15：100的空气与氩气的流量比引入真空室，并通过电源施加范围从100瓦至5000瓦的直流功率 。 由于可以方便地收集空气并且基础压力的要求低于现有技术方法的要求，所以本发明的方法具有设备要求简单，制造时间短，成本低的优点。

公开(公告)号：US08524049B2

公开(公告)日：2013-09-03

申请号：US12167361

申请日：2008-07-03

申请人： Fu-Hsing Lu ,  Jiun-Huei Yang ,  Po-Lun Wu ,  Mu-Hsuan Chan

发明人： Fu-Hsing Lu ,  Jiun-Huei Yang ,  Po-Lun Wu ,  Mu-Hsuan Chan

IPC分类号： C23C14/34

CPC分类号： C23C14/0641

摘要： A method for forming a metallic nitride film includes the steps of a) providing a target made of titanium or zirconium and a substrate in a vacuum chamber, and b) forming a metallic film, which is a TiN film or a ZrN film, on a surface of the substrate by sputtering deposition under the conditions of maintaining a working pressure of the vacuum chamber in a range of 5×10−4 Torr to 5×10−2 Torr; introducing a gas mixture of air and argon into the vacuum chamber at a flow rate ratio of the air to the argon ranging from 5:100 to 15:100, and applying a direct current power ranging from 100 Watts to 5000 Watts by a power supply. Because air can be conveniently collected and the requirement of the base pressure is lower than that of a prior art method, the method of the present invention has the advantages of simple equipment requirement, time-effective manufacturing processes and low cost.

摘要翻译： 一种形成金属氮化物膜的方法包括以下步骤：a）在真空室中提供由钛或锆制成的靶和基底，b）在TiN膜或ZrN膜上形成金属膜 在将真空室的工作压力维持在5×10 -4 Torr至5×10 -2 Torr的范围内的溅射沉积的基板的表面上; 将空气和氩气的气体混合物以5：100至15：100的空气与氩气的流量比引入真空室，并通过电源施加范围从100瓦至5000瓦的直流功率 。 由于可以方便地收集空气并且基础压力的要求低于现有技术方法的要求，所以本发明的方法具有设备要求简单，制造时间短，成本低的优点。