Method for forming metallic nitride film
    1.
    发明授权
    Method for forming metallic nitride film 有权
    形成金属氮化物膜的方法

    公开(公告)号:US08524049B2

    公开(公告)日:2013-09-03

    申请号:US12167361

    申请日:2008-07-03

    IPC分类号: C23C14/34

    CPC分类号: C23C14/0641

    摘要: A method for forming a metallic nitride film includes the steps of a) providing a target made of titanium or zirconium and a substrate in a vacuum chamber, and b) forming a metallic film, which is a TiN film or a ZrN film, on a surface of the substrate by sputtering deposition under the conditions of maintaining a working pressure of the vacuum chamber in a range of 5×10−4 Torr to 5×10−2 Torr; introducing a gas mixture of air and argon into the vacuum chamber at a flow rate ratio of the air to the argon ranging from 5:100 to 15:100, and applying a direct current power ranging from 100 Watts to 5000 Watts by a power supply. Because air can be conveniently collected and the requirement of the base pressure is lower than that of a prior art method, the method of the present invention has the advantages of simple equipment requirement, time-effective manufacturing processes and low cost.

    摘要翻译: 一种形成金属氮化物膜的方法包括以下步骤:a)在真空室中提供由钛或锆制成的靶和基底,b)在TiN膜或ZrN膜上形成金属膜 在将真空室的工作压力维持在5×10 -4 Torr至5×10 -2 Torr的范围内的溅射沉积的基板的表面上; 将空气和氩气的气体混合物以5:100至15:100的空气与氩气的流量比引入真空室,并通过电源施加范围从100瓦至5000瓦的直流功率 。 由于可以方便地收集空气并且基础压力的要求低于现有技术方法的要求,所以本发明的方法具有设备要求简单,制造时间短,成本低的优点。

    Titanium dioxide film synthesizing method and the product thereof
    2.
    发明申请
    Titanium dioxide film synthesizing method and the product thereof 审中-公开
    二氧化钛膜的合成方法及其制品

    公开(公告)号:US20050103639A1

    公开(公告)日:2005-05-19

    申请号:US10714856

    申请日:2003-11-18

    IPC分类号: C25D9/00 C25D11/26

    CPC分类号: C25D11/26

    摘要: A titanium dioxide films synthesizing method includes the step of coating a titanium film on the surface of a homogenous (or heterogeneous) substrate, and the step of using the titanium-coated substrate as anode in an electrolyte to synthesize an nano-structured titanium dioxide film with single anatase phase on the surface of the titanium film by employing electrochemical anodic oxidation at room temperature.

    摘要翻译: 二氧化钛膜合成方法包括在均匀(或非均相)基板的表面上涂覆钛膜的步骤,以及在电解质中使用钛涂覆的基板作为阳极的步骤来合成纳米结构的二氧化钛膜 通过在室温下进行电化学阳极氧化,在钛膜的表面上具有单锐钛矿相。

    METHOD FOR FORMING METALLIC NITRIDE FILM
    3.
    发明申请
    METHOD FOR FORMING METALLIC NITRIDE FILM 有权
    形成金属氮化物膜的方法

    公开(公告)号:US20090008241A1

    公开(公告)日:2009-01-08

    申请号:US12167361

    申请日:2008-07-03

    IPC分类号: C23C14/34

    CPC分类号: C23C14/0641

    摘要: A method for forming a metallic nitride film includes the steps of a) providing a target made of titanium or zirconium and a substrate in a vacuum chamber, and b) forming a metallic film, which is a TiN film or a ZrN film, on a surface of the substrate by sputtering deposition under the conditions of maintaining a working pressure of the vacuum chamber in a range of 5×10−4 Torr to 5×10−2 Torr; introducing a gas mixture of air and argon into the vacuum chamber at a flow rate ratio of the air to the argon ranging from 5:100 to 15:100, and applying a direct current power ranging from 100 Watts to 5000 Watts by a power supply. Because air can be conveniently collected and the requirement of the base pressure is lower than that of a prior art method, the method of the present invention has the advantages of simple equipment requirement, time-effective manufacturing processes and low cost.

    摘要翻译: 一种形成金属氮化物膜的方法包括以下步骤:a)在真空室中提供由钛或锆制成的靶和基底,b)在TiN膜或ZrN膜上形成金属膜 在将真空室的工作压力维持在5×10 -4 Torr至5×10 -2 Torr的范围内的溅射沉积的基板的表面上; 将空气和氩气的气体混合物以5:100至15:100的空气与氩气的流量比引入真空室,并通过电源施加范围从100瓦至5000瓦的直流功率 。 由于可以方便地收集空气并且基础压力的要求低于现有技术方法的要求,所以本发明的方法具有设备要求简单,制造时间短,成本低的优点。

    Barium titanate film synthesizing process
    4.
    发明授权
    Barium titanate film synthesizing process 失效
    钛酸钡薄膜合成工艺

    公开(公告)号:US07077943B2

    公开(公告)日:2006-07-18

    申请号:US10612007

    申请日:2003-07-03

    IPC分类号: C25D11/02

    摘要: A new technique to synthesize barium titanate (BaTiO3) on homogeneous substrates (titanium) or heterogeneous substrates (silicon wafers, metal, glass, ceramics, polymers, other metals, etc.) is disclosed to include a first step to deposit a titanium film on a substrate by sputtering, and a second step to synthesize barium titanate film with uniformly dispersed spherical particles on the titanium-coated substrate in a electrolyte containing barium ions by electrochemically anodic oxidation.

    摘要翻译: 公开了在均质基底(钛)或异质基底(硅晶片,金属,玻璃,陶瓷,聚合物,其它金属等)上合成钛酸钡(BaTiO 3 3)的新技术,包括 通过溅射将钛膜沉积在基板上的第一步骤,以及通过电化学阳极氧化在含钛钡离子的电解质中在钛涂覆的基板上合成具有均匀分散的球形颗粒的钛酸钡膜的第二步骤。

    METHOD FOR FORMING OXIDE FILM BY PLASMA ELECTROLYTIC OXIDATION
    5.
    发明申请
    METHOD FOR FORMING OXIDE FILM BY PLASMA ELECTROLYTIC OXIDATION 有权
    用等离子体电解氧化法形成氧化膜的方法

    公开(公告)号:US20130056360A1

    公开(公告)日:2013-03-07

    申请号:US13227277

    申请日:2011-09-07

    摘要: A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.

    摘要翻译: 通过等离子体电解氧化形成氧化膜的方法包括将作为具有导电氮化物膜的基板的阳极和阴极放置在温度范围为20℃至100℃的电解质中的第一步骤 并且向阳极和阴极施加50V至1000V的电压的第二步骤,以最终在阳极的导电氮化物膜的表面上形成氧化物膜。 氧化膜可以比现有技术更快地形成并且具有优异的结晶度。

    Method for forming oxide film by plasma electrolytic oxidation
    6.
    发明授权
    Method for forming oxide film by plasma electrolytic oxidation 有权
    通过等离子体电解氧化形成氧化膜的方法

    公开(公告)号:US08808522B2

    公开(公告)日:2014-08-19

    申请号:US13227277

    申请日:2011-09-07

    摘要: A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.

    摘要翻译: 通过等离子体电解氧化形成氧化膜的方法包括将作为具有导电氮化物膜的基板的阳极和阴极放置在温度范围为20℃至100℃的电解质中的第一步骤 并且向阳极和阴极施加50V至1000V的电压的第二步骤,以最终在阳极的导电氮化物膜的表面上形成氧化物膜。 氧化膜可以比现有技术更快地形成并且具有优异的结晶度。

    Barium titanate film synthesizing process
    7.
    发明申请
    Barium titanate film synthesizing process 失效
    钛酸钡薄膜合成工艺

    公开(公告)号:US20050003078A1

    公开(公告)日:2005-01-06

    申请号:US10612007

    申请日:2003-07-03

    摘要: A new technique to synthesize barium titanate (BaTiO3) on homogeneous substrates (titanium) or heterogeneous substrates (silicon wafers, metal, glass, ceramics, polymers, other metals, etc.) is disclosed to include a first step to deposit a titanium film on a substrate by sputtering, and a second step to synthesize barium titanate film with uniformly dispersed spherical particles on the titanium-coated substrate in a electrolyte containing barium ions by electrochemically anodic oxidation.

    摘要翻译: 公开了一种在均匀基板(钛)或异质基板(硅晶片,金属,玻璃,陶瓷,聚合物,其它金属等)上合成钛酸钡(BaTiO 3)的新技术,包括将钛膜沉积在第一步骤 通过溅射形成基板,第二步是通过电化学阳极氧化在含钛钡离子的电解质中在钛涂覆的基板上合成具有均匀分散的球形颗粒的钛酸钡膜。