公开(公告)号：US08048596B2

公开(公告)日：2011-11-01

申请号：US12727444

申请日：2010-03-19

申请人： Yasushi Okubo ,  Mutsumi Hara

发明人： Yasushi Okubo ,  Mutsumi Hara

IPC分类号： G03F1/00 ,  B32B9/06

CPC分类号： G03F1/80

摘要： In a photomask blank serving as a base member for producing a halftone-type phase shift mask in which a light-transmissive substrate is formed thereon with a light-semitransmissive phase shift pattern having a desired opening, a light-semitransmissive phase shift film, a chromium film, and an etching mask film are stacked in order on the light-transmissive substrate. The etching mask film is made of an inorganic-based material having a resistance against dry etching of the chromium film. The photomask blank further may has a resist film formed on the etching mask film.

摘要翻译： 在用作制造半透射型相移掩模的基底构件的光掩模坯料中，其中在其上形成具有期望开口的光半透射相移图案的透光基板，光半透射相移膜， 铬膜和蚀刻掩模膜依次层叠在透光性基板上。 蚀刻掩模膜由具有耐蚀刻铬膜的无机基材料制成。 光掩模坯料还可以具有形成在蚀刻掩模膜上的抗蚀剂膜。

公开(公告)号：US20050019674A1

公开(公告)日：2005-01-27

申请号：US10820785

申请日：2004-04-09

申请人： Yasushi Okubo ,  Mutsumi Hara

发明人： Yasushi Okubo ,  Mutsumi Hara

IPC分类号： G03C5/00 ,  G03F1/32 ,  G03F1/34 ,  G03F1/68 ,  G03F1/80 ,  G03F9/00 ,  H01L21/027 ,  H01L21/3065

CPC分类号： G03F1/80

摘要： In a method of producing a photomask (10) in which a light-transmissive substrate (1) is formed thereon with a chromium pattern (21) having a global opening ratio difference in its plane on the light-transmissive substrate (1), use is made, as an etching mask for a chromium film (2), of an etching mask pattern (31) made of an inorganic-based material having a resistance against etching of the chromium film (2). Dry etching of the chromium film (2) is carried out under a condition selected from conditions that cause damage to a resist pattern (41) to a degree which is unallowable when etching the chromium film (2) using the resist pattern (41) as a mask.

摘要翻译： 在其上形成透光性基板（1）的光掩模（10）的制造方法中，在透光性基板（1）上形成有在其透光性基板（1）的平面上具有全局开口率差的铬图案（21），使用 作为铬膜（2）的蚀刻掩模，制成由具有耐蚀刻铬膜（2）的无机基材料制成的蚀刻掩模图案（31）。 铬膜（2）的干法蚀刻在选自使用抗蚀图案（41）蚀刻铬膜（2）时对抗蚀剂图案（41）造成损伤的条件下至不能允许的程度的条件下进行， 一个面具

公开(公告)号：US07314690B2

公开(公告)日：2008-01-01

申请号：US10820785

申请日：2004-04-09

申请人： Yasushi Okubo ,  Mutsumi Hara

发明人： Yasushi Okubo ,  Mutsumi Hara

IPC分类号： G03F1/00

CPC分类号： G03F1/80

摘要： In a method of producing a photomask (10) in which a light-transmissive substrate (1) is formed thereon with a chromium pattern (21) having a global opening ratio difference in its plane on the light-transmissive substrate (1), use is made, as an etching mask for a chromium film (2), of an etching mask pattern (31) made of an inorganic-based material having a resistance against etching of the chromium film (2). Dry etching of the chromium film (2) is carried out under a condition selected from conditions that cause damage to a resist pattern (41) to a degree which is unallowable when etching the chromium film (2) using the resist pattern (41) as a mask.

摘要翻译： 在其上形成透光性基板（1）的光掩模（10）的制造方法中，在透光性基板（1）上形成有在其透光性基板（1）的平面上具有全局开口率差的铬图案（21），使用 作为铬膜（2）的蚀刻掩模，制成由具有耐蚀刻铬膜（2）的无机基材料制成的蚀刻掩模图案（31）。 铬膜（2）的干法蚀刻在选自使用抗蚀图案（41）蚀刻铬膜（2）时对抗蚀剂图案（41）造成损伤的条件下至不能允许的程度的条件下进行， 一个面具

公开(公告)号：US20100173234A1

公开(公告)日：2010-07-08

申请号：US12727444

申请日：2010-03-19

申请人： Yasushi OKUBO ,  Mutsumi HARA

发明人： Yasushi OKUBO ,  Mutsumi HARA

IPC分类号： G03F1/00

CPC分类号： G03F1/80

摘要： In a photomask blank serving as a base member for producing a halftone-type phase shift mask in which a light-transmissive substrate is formed thereon with a light-semitransmissive phase shift pattern having a desired opening, a light-semitransmissive phase shift film, a chromium film, and an etching mask film are stacked in order on the light-transmissive substrate. The etching mask film is made of an inorganic-based material having a resistance against dry etching of the chromium film. The photomask blank further may has a resist film formed on the etching mask film.

摘要翻译： 在用作制造半透射型相移掩模的基底构件的光掩模坯料中，其中在其上形成具有期望开口的光半透射相移图案的透光基板，光半透射相移膜， 铬膜和蚀刻掩模膜依次层叠在透光性基板上。 蚀刻掩模膜由具有耐蚀刻铬膜的无机基材料制成。 光掩模坯料还可以具有形成在蚀刻掩模膜上的抗蚀剂膜。

公开(公告)号：US20080286662A1

公开(公告)日：2008-11-20

申请号：US11949566

申请日：2007-12-03

申请人： Yasushi OKUBO ,  Mutsumi Hara

发明人： Yasushi OKUBO ,  Mutsumi Hara

IPC分类号： G03F1/00

CPC分类号： G03F1/80

摘要： In a photomask blank serving as a base member for producing a halftone-type phase shift mask in which a light-transmissive substrate is formed thereon with a light-semitransmissive phase shift pattern having a desired opening, a light-semitransmissive phase shift film, a chromium film, and an etching mask film are stacked in order on the light-transmissive substrate. The etching mask film is made of an inorganic-based material having a resistance against dry etching of the chromium film. The photomask blank further may has a resist film formed on the etching mask film.

摘要翻译： 在用作制造半透射型相移掩模的基底构件的光掩模坯料中，其中在其上形成具有期望开口的光半透射相移图案的透光基板，光半透射相移膜， 铬膜和蚀刻掩模膜依次层叠在透光性基板上。 蚀刻掩模膜由具有耐蚀刻铬膜的无机基材料制成。 光掩模坯料还可以具有形成在蚀刻掩模膜上的抗蚀剂膜。

公开(公告)号：US07709161B2

公开(公告)日：2010-05-04

申请号：US11949566

申请日：2007-12-03

申请人： Yasushi Okubo ,  Mutsumi Hara

发明人： Yasushi Okubo ,  Mutsumi Hara

IPC分类号： G03F1/00

CPC分类号： G03F1/80

摘要： In a photomask blank serving as a base member for producing a halftone-type phase shift mask in which a light-transmissive substrate is formed thereon with a light-semitransmissive phase shift pattern having a desired opening, a light-semitransmissive phase shift film, a chromium film, and an etching mask film are stacked in order on the light-transmissive substrate. The etching mask film is made of an inorganic-based material having a resistance against dry etching of the chromium film. The photomask blank further may has a resist film formed on the etching mask film.

摘要翻译： 在用作制造半透射型相移掩模的基底构件的光掩模坯料中，其中在其上形成具有期望开口的光半透射相移图案的透光基板，光半透射相移膜， 铬膜和蚀刻掩模膜依次层叠在透光性基板上。 蚀刻掩模膜由具有耐蚀刻铬膜的无机基材料制成。 光掩模坯料还可以具有形成在蚀刻掩模膜上的抗蚀剂膜。