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公开(公告)号：US09666818B2
公开(公告)日：2017-05-30
申请号：US13395517
申请日：2010-09-08
申请人： Yasushi Okubo , Noriko Yasukawa , Hiroaki Itoh , Takamune Hattori
发明人： Yasushi Okubo , Noriko Yasukawa , Hiroaki Itoh , Takamune Hattori
CPC分类号： H01L51/4253 , B82Y10/00 , H01L27/302 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0047 , H01L2251/552 , Y02E10/549
摘要： A tandem-type organic photoelectric conversion element has at least a first electrode, a second electrode, and a plurality of bulk heterojunction layers each comprising a p-type organic semiconductor material and an n-type organic semiconductor material. The tandem-type organic photoelectric conversion element and a solar battery are characterized in that when the absorption wavelengths of the bulk heterojunction layers are such that a second bulk heterojunction layer absorbs up to a longer wavelength than a first bulk heterojunction layer, the LUMO energy level (LUMO(n1)) of the film of the n-type semiconductor in the first bulk heterojunction layer and the LUMO energy level (LUMO(n2)) of the film of the n-type semiconductor in the second bulk heterojunction layer satisfy the following equation (1): 0.4 eV≧LUMO(n1)−LUMO(n2)≧0.1 eV (1).
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公开(公告)号：US08967848B2
公开(公告)日：2015-03-03
申请号：US13130615
申请日：2009-11-16
申请人： Yasushi Okubo , Takahiko Nojima , Hiroaki Itoh , Ayako Wachi
发明人： Yasushi Okubo , Takahiko Nojima , Hiroaki Itoh , Ayako Wachi
CPC分类号： H01L27/305 , B82Y10/00 , H01L27/288 , H01L51/0036 , H01L51/0047 , H01L51/0085 , H01L2251/5361 , H05B33/0896
摘要： Provided is a lightweight flexible lighting device with excellent durability and stable performance over repeated use that combines an organic electroluminescent element, an organic photoelectric conversion element, and a secondary cell. The lighting device has a control means for controlling the electrical connections of the organic electroluminescent element, the organic photoelectric conversion element, and the secondary cell. The control means controls the electrical connections such that a reverse bias voltage is applied to the organic electroluminescent element when the organic electroluminescent element receives light, generates power, and charges the secondary cell, and such that a reverse bias voltage is applied to the organic photoelectric conversion element when the organic electroluminescent element is supplied with power from the secondary cell and emits light.
摘要翻译： 提供了一种轻巧的柔性照明装置，其具有优异的耐久性和超过重复使用的稳定性能，其结合有机电致发光元件，有机光电转换元件和二次电池。 照明装置具有用于控制有机电致发光元件，有机光电转换元件和二次电池的电连接的控制装置。 控制装置控制电气连接，使得当有机电致发光元件接收光，产生电力并对二次电池充电时，向有机电致发光元件施加反向偏置电压，并且反向偏置电压施加到有机电致发光元件 当有机电致发光元件从二次电池供电并发光时，转换元件。
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3.发明授权Organic photoelectric conversion element, solar cell and optical sensor array 有权有机光电转换元件，太阳能电池和光学传感器阵列公开(公告)号：US08729387B2
公开(公告)日：2014-05-20
申请号：US12934826
申请日：2009-08-21
申请人： Yasushi Okubo , Takahiko Nojima , Hiroaki Itoh , Ayako Wachi
发明人： Yasushi Okubo , Takahiko Nojima , Hiroaki Itoh , Ayako Wachi
CPC分类号： H01L51/0047 , B82Y10/00 , H01L27/307 , H01L51/0036 , H01L51/0078 , H01L51/424 , H01L51/4253 , Y02E10/549
摘要： Disclosed is an organic photoelectric conversion element having high photoelectric conversion efficiency and high durability. Also disclosed are a solar cell and an optical sensor array, each using the organic photoelectric conversion element. The organic photoelectric conversion element comprises a bulk heterojunction layer wherein an n-type semiconductor material and a p-type semiconductor material are mixed. The organic photoelectric conversion element is characterized in that the n-type semiconductor material is a polymer compound and the p-type semiconductor material is a low-molecular-weight compound.
摘要翻译： 公开了具有高光电转换效率和高耐久性的有机光电转换元件。 还公开了各自使用有机光电转换元件的太阳能电池和光学传感器阵列。 有机光电转换元件包括混合n型半导体材料和p型半导体材料的体异质结层。 有机光电转换元件的特征在于，n型半导体材料是高分子化合物，p型半导体材料是低分子量化合物。
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公开(公告)号：US08664518B2
公开(公告)日：2014-03-04
申请号：US12962027
申请日：2010-12-07
申请人： Ayako Wachi , Takahiko Nojima , Yasushi Okubo , Hiroaki Itoh
发明人： Ayako Wachi , Takahiko Nojima , Yasushi Okubo , Hiroaki Itoh
IPC分类号： H01L31/0224
CPC分类号： H01L51/444 , H01L51/0036 , H01L51/0037 , H01L51/4253 , H01L51/442 , Y02E10/549
摘要： Provided is an organic photoelectric conversion element containing: a first electrode; a second electrode; and an organic photoelectric conversion layer sandwiched between the first electrode and the second electrode, wherein the first electrode comprises: a conductive fiber layer; and a transparent conductive layer containing a conductive polymer comprising a π conjugated conductive polymer and a polyanion, and an aqueous binder, and at least a part of the transparent conductive layer containing the conductive polymer and the aqueous binder is cross-linked therein.
摘要翻译： 提供一种有机光电转换元件，其包含：第一电极; 第二电极; 以及夹在所述第一电极和所述第二电极之间的有机光电转换层，其中所述第一电极包括：导电纤维层; 以及含有包含π共轭导电聚合物和聚阴离子的导电聚合物和水性粘合剂的透明导电层，并且含有导电聚合物和含水粘合剂的至少一部分透明导电层交联。
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公开(公告)号：US20120241003A1
公开(公告)日：2012-09-27
申请号：US13514328
申请日：2010-12-01
申请人： Ayako Wachi , Takahiko Nojima , Yasushi Okubo , Hiroaki Itoh
发明人： Ayako Wachi , Takahiko Nojima , Yasushi Okubo , Hiroaki Itoh
IPC分类号： H01L51/44
CPC分类号： H01L51/4246 , H01L51/0036 , H01L51/0037 , H01L51/0053 , H01L51/0072 , H01L51/0073 , H01L51/4273 , H01L51/441 , H01L2251/308 , Y02E10/549
摘要： Disclosed is an organic photoelectric conversion element which has excellent photoelectric conversion efficiency and excellent temperature stability with respect to power generation. The organic photoelectric conversion element comprises at least one photoelectric conversion layer and at least one carrier transport layer between a first electrode and a second electrode, and is characterized in that the carrier transport layer contains the salt of an alkali metal or an alkaline earth metal or the complex thereof of an alkali metal or an alkaline earth metal.
摘要翻译： 公开了一种有机光电转换元件，其具有优异的光电转换效率和相对于发电的优异的温度稳定性。 有机光电转换元件包括至少一个光电转换层和在第一电极和第二电极之间的至少一个载流子传输层，其特征在于，载流子传输层含有碱金属或碱土金属的盐或 其碱金属或碱土金属的络合物。
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6.发明申请PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD 有权光电隔离器及其制造方法，以及光电二极管生产方法和半导体器件生产方法公开(公告)号：US20120129084A1
公开(公告)日：2012-05-24
申请号：US13347425
申请日：2012-01-10
IPC分类号： G03F1/50
摘要： A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚。 光掩模坯料通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好的图案精度，并且通过提高屏蔽膜的干蚀刻速率能够减少干蚀刻时间。 光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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公开(公告)号：US20120100466A1
公开(公告)日：2012-04-26
申请号：US13260295
申请日：2010-03-30
摘要： A mask blank and transfer mask that overcomes problems caused by an electromagnetic field (EMF) effect when the DRAM half pitch (hp) specified in semiconductor device design specifications is 32 nm or less. The mask blank is used in manufacturing a transfer mask to which ArF exposure light is applied, and includes a light shielding film 10 having a multilayer structure. The multilayer structure includes a light shielding layer 11 and a surface anti-reflection layer 12 formed on a transparent substrate 1. An auxiliary light shielding film 20 is formed on the light shielding film 10. The light shielding film 10 has a thickness of 40 nm or less and an optical density of 2.0 or more to 2.7 or less for exposure light. The optical density for exposure light in the multilayer structure of the light shielding film 10 and the auxiliary light shielding film 20 is 2.8 or more.
摘要翻译： 当在半导体器件设计规范中规定的DRAM半间距（hp）为32nm以下时，能够克服由电磁场（EMF）效应引起的问题的掩模空白和传送掩模。 掩模坯料用于制造施加ArF曝光光的转印掩模，并且包括具有多层结构的遮光膜10。 多层结构包括形成在透明基板1上的遮光层11和表面防反射层12.在遮光膜10上形成辅助遮光膜20.遮光膜10的厚度为40nm 曝光光的光密度为2.0以上且2.7以下。 遮光膜10和辅助遮光膜20的多层结构中的曝光光的光密度为2.8以上。
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8.发明授权Photomask blank and production method thereof, and photomask production method, and semiconductor device production method 有权光掩模坯及其制造方法以及光掩模的制造方法以及半导体装置的制造方法公开(公告)号：US08114556B2
公开(公告)日：2012-02-14
申请号：US12066360
申请日：2006-09-08
IPC分类号： G03F1/00
摘要： There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film.The photomask blank of the present invention includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 提供了一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚，通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好图案精度的光掩模坯料， 以及通过提高屏蔽膜的干蚀刻速度能够减少干蚀刻时间的光掩模坯料。 本发明的光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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公开(公告)号：US08043771B2
公开(公告)日：2011-10-25
申请号：US12416468
申请日：2009-04-01
IPC分类号： G03F1/00
CPC分类号： G03F1/32
摘要： Disclosed is a phase shift mask blank (11) that can prevent the occurrence of a loading effect. The phase shift mask blank (11) includes a phase shift film (5) containing silicon, a light-shielding film (2) made of a material resistant to etching of the phase shift film (5), and an etching mask film (3) made of an inorganic material resistant to etching of the light-shielding film (2), which are formed in this order on a substrate (1) transparent to exposure light. Assuming that the thickness of the phase shift film (5) is t1, the etching rate of the phase shift film (5) by dry etching with an etchant using the etching mask film (3) and the light-shielding film (2) as a mask is v1, the thickness of the etching mask film (3) is t2, and the etching rate of the etching mask film (3) by dry etching with the above etchant is v2, (t1/v1)≦(t2/v2) is satisfied.
摘要翻译： 公开了能够防止发生负载效应的相移掩模坯料（11）。 相移掩模空白（11）包括含有硅的相移膜（5），由耐相变膜（5）的蚀刻材料制成的遮光膜（2）和蚀刻掩模膜（3） ）由能够对透光的基板（1）上的遮光膜（2）的蚀刻的无机材料制成。 假设相移膜（5）的厚度为t1，通过使用蚀刻掩模膜（3）和遮光膜（2）的蚀刻剂进行干蚀刻的相移膜（5）的蚀刻速率为 掩模为v1，蚀刻掩模膜（3）的厚度为t2，用上述蚀刻剂通过干蚀刻蚀刻掩模膜（3）的蚀刻速率为v2，（t1 / v1）＆nlE;（t2 / v2）满足。
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10.发明授权Mask blank glass substrate manufacturing method, mask blank manufacturing method, mask manufacturing method, mask blank glass substrate, mask blank, and mask 有权掩模坯料玻璃基板的制造方法，掩模坯料的制造方法，掩模制造方法，掩模坯料玻璃基板，掩模坯料和掩模公开(公告)号：US07851108B2
公开(公告)日：2010-12-14
申请号：US11391332
申请日：2006-03-29
CPC分类号： G03F1/38 , Y10T428/31616
摘要： A method of manufacturing a mask blank glass substrate or mask blank that includes a mark forming step, and a mask blank glass substrate or mask blank that includes a mark. The mark is a pit formed by irradiating laser light onto a mirror-like surface in an area, having no influence on transfer, on a surface of the mask blank glass substrate. The pit is used as a marker for individually identifying or managing the mask blank glass substrate. The marker may be correlated with information including at least one of substrate information about the mask blank glass substrate, thin film information about the mask pattern thin film, and resist film information about the resist film. A mask blank glass substrate with marker correlated to at least one of the resist film information and thin film information may be used to manufacture a new mask blank.
摘要翻译： 包括标记形成步骤的掩模坯料玻璃基板或掩模坯料的制造方法以及包括标记的掩模坯料玻璃基板或掩模坯料。 标记是通过在掩模坯料玻璃基板的表面上将激光照射到不影响转印的区域中的镜状表面上形成的凹坑。 凹坑用作单独识别或管理掩模坯料玻璃基板的标记。 标记可以与包括关于掩模坯料玻璃基板的基板信息，关于掩模图案薄膜的薄膜信息和关于抗蚀剂膜的抗蚀剂膜信息中的至少一个的信息相关联。 具有与抗蚀剂膜信息和薄膜信息中的至少一个相关的标记的掩模坯料玻璃基板可以用于制造新的掩模坯料。
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