公开(公告)号：US08547721B2

公开(公告)日：2013-10-01

申请号：US12385566

申请日：2009-04-13

申请人： Seungeon Ahn ,  Kihwan Kim ,  Changjung Kim ,  Myungjae Lee ,  Bosoo Kang ,  Changbum Lee

发明人： Seungeon Ahn ,  Kihwan Kim ,  Changjung Kim ,  Myungjae Lee ,  Bosoo Kang ,  Changbum Lee

IPC分类号： G11C5/06 ,  G11C5/02 ,  G11C11/21 ,  H01L29/00 ,  H01L47/00

CPC分类号： H01L27/24

摘要： Disclosed is a resistive memory device. In the resistive memory device, at least one variable resistance region and at least one switching device may be horizontally apart from each other, rather than being disposed on the same vertical axis. At least one intermediate electrode, which electrically connects the at least one variable resistance region and the at least one switching device, may be between the at least one variable resistance region and the at least one switching device.

摘要翻译： 公开了一种电阻式存储器件。 在电阻式存储器件中，至少一个可变电阻区域和至少一个开关器件可以彼此水平分开，而不是设置在相同的垂直轴上。 将至少一个可变电阻区域和至少一个开关装置电连接的至少一个中间电极可以在所述至少一个可变电阻区域和所述至少一个开关装置之间。

公开(公告)号：US20100090187A1

公开(公告)日：2010-04-15

申请号：US12385566

申请日：2009-04-13

申请人： Seungeon AHN ,  Kihwan KIM ,  Changjung KIM ,  Myungjae LEE ,  Bosoo KANG ,  Changbum LEE

发明人： Seungeon AHN ,  Kihwan KIM ,  Changjung KIM ,  Myungjae LEE ,  Bosoo KANG ,  Changbum LEE

IPC分类号： H01L47/00 ,  H01L29/00 ,  H01L29/10

CPC分类号： H01L27/24

摘要： Disclosed is a resistive memory device. In the resistive memory device, at least one variable resistance region and at least one switching device may be horizontally apart from each other, rather than being disposed on the same vertical axis. At least one intermediate electrode, which electrically connects the at least one variable resistance region and the at least one switching device, may be between the at least one variable resistance region and the at least one switching device.

摘要翻译： 公开了一种电阻式存储器件。 在电阻式存储器件中，至少一个可变电阻区域和至少一个开关器件可以彼此水平分开，而不是设置在相同的垂直轴上。 将至少一个可变电阻区域和至少一个开关装置电连接的至少一个中间电极可以在所述至少一个可变电阻区域和所述至少一个开关装置之间。