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1.发明授权公开(公告)号：US08033771B1
公开(公告)日：2011-10-11
申请号：US12333239
申请日：2008-12-11
IPC分类号： H01L21/677
CPC分类号： H01L21/67109 , H01L21/67201 , H01L21/68735 , H01L21/6875 , Y10S414/135
摘要： Apparatuses and methods for cooling and transferring wafers from low pressure environment to high pressure environment are provided. An apparatus may include a cooling pedestal and a set of supports for holding the wafer above the cooling pedestal. The average gap between the wafer and the cooling pedestal may be no greater than about 0.010 inches. Venting gases may be used to increase the pressure inside the apparatus during the transfer. In certain embodiment, venting gases comprise nitrogen.
摘要翻译： 提供了将晶片从低压环境冷却和转移到高压环境的设备和方法。 设备可以包括冷却基座和用于将晶片保持在冷却基座上方的一组支撑件。 晶片和冷却基座之间的平均间隙可以不大于约0.010英寸。 可以使用通风气体来增加传送过程中设备内部的压力。 在某些实施方案中，排放气体包括氮气。
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2.发明申请公开(公告)号：US20110318142A1
公开(公告)日：2011-12-29
申请号：US13227160
申请日：2011-09-07
IPC分类号： H01L21/677
CPC分类号： H01L21/67109 , H01L21/67201 , H01L21/68735 , H01L21/6875 , Y10S414/135
摘要： Apparatuses and methods for cooling and transferring wafers from low pressure environment to high pressure environment are provided. An apparatus may include a cooling pedestal and a set of supports for holding the wafer above the cooling pedestal. The average gap between the wafer and the cooling pedestal may be no greater than about 0.010 inches. Venting gases may be used to increase the pressure inside the apparatus during the transfer. In certain embodiment, venting gases comprise nitrogen.
摘要翻译： 提供了将晶片从低压环境冷却和转移到高压环境的设备和方法。 设备可以包括冷却基座和用于将晶片保持在冷却基座上方的一组支撑件。 晶片和冷却基座之间的平均间隙可以不大于约0.010英寸。 可以使用通风气体来增加传送过程中设备内部的压力。 在某些实施方案中，排放气体包括氮气。
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3.发明授权公开(公告)号：US08454294B2
公开(公告)日：2013-06-04
申请号：US13227160
申请日：2011-09-07
IPC分类号： H01L21/677
CPC分类号： H01L21/67109 , H01L21/67201 , H01L21/68735 , H01L21/6875 , Y10S414/135
摘要： Apparatuses and methods for cooling and transferring wafers from low pressure environment to high pressure environment are provided. An apparatus may include a cooling pedestal and a set of supports for holding the wafer above the cooling pedestal. The average gap between the wafer and the cooling pedestal may be no greater than about 0.010 inches. Venting gases may be used to increase the pressure inside the apparatus during the transfer. In certain embodiment, venting gases comprise nitrogen.
摘要翻译： 提供了将晶片从低压环境冷却和转移到高压环境的设备和方法。 设备可以包括冷却基座和用于将晶片保持在冷却基座上方的一组支撑件。 晶片和冷却基座之间的平均间隙可以不大于约0.010英寸。 可以使用通风气体来增加传送过程中设备内部的压力。 在某些实施方案中，排放气体包括氮气。
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