公开(公告)号：US20100158056A1

公开(公告)日：2010-06-24

申请号：US12495616

申请日：2009-06-30

Applicant: Jae-Heon Shin ,  Kyung-Hyun Park ,  Nam-Je Kim ,  Chul-Wook Lee ,  Eun-Deok Sim ,  Sang-Pil Han ,  Yong-Soon Baek

Inventor： Jae-Heon Shin ,  Kyung-Hyun Park ,  Nam-Je Kim ,  Chul-Wook Lee ,  Eun-Deok Sim ,  Sang-Pil Han ,  Yong-Soon Baek

IPC: H01S3/13

CPC classification number: H01S5/06256 ,  H01S5/0623 ,  H01S5/1215 ,  H01S2302/02

Abstract: Provided is a semiconductor laser device including: a gain area where multi-wavelength lights are generated and gain are provided; a first reflection area where among the multi-wavelength lights, a first-wavelength light is reflected to the gain area in response to a first selection signal; a second reflection area where among the multi-wavelength lights, a second-wavelength light is reflected to the gain area; and a phase control area where a phase of the second-wavelength light is shifted in response to a phase control signal, the phase control area being disposed between the first reflection layer and the second reflection layer.

Abstract translation: 本发明提供一种半导体激光装置，具备：生成多波长光并增益的增益区域; 第一反射区域，其中在所述多波长光之中，响应于第一选择信号，第一波长光被反射到所述增益区域; 第二反射区域，其中在多波长光中，第二波长光被反射到增益区域; 以及相位控制区域，其中所述第二波长光的相位响应于相位控制信号而移位，所述相位控制区域设置在所述第一反射层和所述第二反射层之间。