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1.发明授权Silicon parts having reduced metallic impurity concentration for plasma reaction chambers 有权具有降低等离子体反应室的金属杂质浓度的硅部件公开(公告)号：US07517803B2
公开(公告)日：2009-04-14
申请号：US10950656
申请日：2004-09-28
申请人： Daxing Ren , Jerome S. Hubacek , Nicholas E. Webb
发明人： Daxing Ren , Jerome S. Hubacek , Nicholas E. Webb
IPC分类号： H01L21/302
CPC分类号： H01J37/32009 , C23C16/4407 , H01J37/3255
摘要： Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.
摘要翻译： 提供了包含在硅中高度移动的低含量金属杂质的半导体处理装置的硅部件。 硅部件包括例如环，电极和电极组件。 硅部件可以减少在等离子体气氛中处理的晶片的金属污染。
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2.发明授权公开(公告)号：US06846726B2
公开(公告)日：2005-01-25
申请号：US10247722
申请日：2002-09-20
申请人： Daxing Ren , Jerome S. Hubacek , Nicholas E. Webb
发明人： Daxing Ren , Jerome S. Hubacek , Nicholas E. Webb
IPC分类号： H01L21/3065 , C23C16/44 , H01J37/32 , H01L21/205 , H01L21/46 , H01L21/301 , H01L21/78
CPC分类号： H01J37/32009 , C23C16/4407 , H01J37/3255
摘要： Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.
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