Monitoring testkey used in semiconductor fabrication
    1.
    发明授权
    Monitoring testkey used in semiconductor fabrication 有权
    监控半导体制造中使用的测试键

    公开(公告)号:US09024407B2

    公开(公告)日:2015-05-05

    申请号:US13313115

    申请日:2011-12-07

    摘要: A monitoring testkey for a wafer is provided. The monitoring testkey includes a first metal oxide semiconductor (MOS) transistor having a channel extending in a first direction, a second MOS transistor having a channel extending in a second direction, a common gate pad electrically connected to gate electrodes of the first MOS transistor and the second MOS transistor, a first source pad electrically connected to source electrodes of the first MOS transistor and the second MOS transistor, a first drain pad electrically connected to a drain electrode of the first MOS transistor, and a second drain pad electrically connected to a drain electrode of the second MOS transistor. The monitoring testkey helps to improve the critical dimension uniformity and electrical characteristics uniformity of elements in a wafer.

    摘要翻译: 提供了晶片的监视测试键。 监视测试键包括具有沿第一方向延伸的通道的第一金属氧化物半导体(MOS)晶体管,具有沿第二方向延伸的沟道的第二MOS晶体管,与第一MOS晶体管的栅极电连接的公共栅极焊盘,以及 第二MOS晶体管,与第一MOS晶体管和第二MOS晶体管的源电极电连接的第一源极焊盘,与第一MOS晶体管的漏极电连接的第一漏极焊盘,以及与第一MOS晶体管电连接的第二漏极焊盘, 第二MOS晶体管的漏电极。 监测测试键有助于提高晶片元件的临界尺寸均匀性和电特性均匀性。

    MONITORING TESTKEY USED IN SEMICONDUCTOR FABRICATION
    2.
    发明申请
    MONITORING TESTKEY USED IN SEMICONDUCTOR FABRICATION 有权
    监测半导体制造中使用的试验

    公开(公告)号:US20130147510A1

    公开(公告)日:2013-06-13

    申请号:US13313115

    申请日:2011-12-07

    IPC分类号: G01R31/26 H01L23/58

    摘要: A monitoring testkey for a wafer is provided. The monitoring testkey includes a first metal oxide semiconductor (MOS) transistor having a channel extending in a first direction, a second MOS transistor having a channel extending in a second direction, a common gate pad electrically connected to gate electrodes of the first MOS transistor and the second MOS transistor, a first source pad electrically connected to source electrodes of the first MOS transistor and the second MOS transistor, a first drain pad electrically connected to a drain electrode of the first MOS transistor, and a second drain pad electrically connected to a drain electrode of the second MOS transistor. The monitoring testkey helps to improve the critical dimension uniformity and electrical characteristics uniformity of elements in a wafer.

    摘要翻译: 提供了晶片的监视测试键。 监视测试键包括具有沿第一方向延伸的通道的第一金属氧化物半导体(MOS)晶体管,具有沿第二方向延伸的沟道的第二MOS晶体管,与第一MOS晶体管的栅极电连接的公共栅极焊盘,以及 第二MOS晶体管,与第一MOS晶体管和第二MOS晶体管的源电极电连接的第一源极焊盘,与第一MOS晶体管的漏极电连接的第一漏极焊盘,以及与第一MOS晶体管电连接的第二漏极焊盘, 第二MOS晶体管的漏电极。 监测测试键有助于提高晶片元件的临界尺寸均匀性和电特性均匀性。