-
公开(公告)号:US20230361237A1
公开(公告)日:2023-11-09
申请号:US18356879
申请日:2023-07-21
发明人: Marc Hofmann , Sebastian Mack , Bishal Kafle , Jochen Rentsch , Nabeel Wahab Khan , Laurent Clochard , Edward Duffy
IPC分类号: H01L31/18 , H01L31/0745
CPC分类号: H01L31/1804 , H01L31/0745
摘要: The embodiments relate to a method for producing a solar cell having a rear-side contact with a tunnel barrier. A monocrystalline wafer having a front side and a rear side may be provided with silicon and a dopant. A tunnel barrier is produced on the wafer, and a polycrystalline or amorphous layer is deposited on the tunnel barrier. The polycrystalline or amorphous layer includes silicon and a dopant. The polycrystalline or amorphous layer is removed on the front side by gas-phase etching.