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公开(公告)号：US07335864B2
公开(公告)日：2008-02-26
申请号：US11443439
申请日：2006-05-31
IPC分类号： H05B6/36
CPC分类号： H05B6/36 , F27B5/14 , F27B9/063 , F27D11/02 , F27D99/0006 , F27D2099/0016 , H01L21/67109
摘要： Heating element assemblies, heating furnaces incorporating heating element assemblies, methods to form heating element assemblies, methods to form heating furnaces and methods to reduce a magnetic field in a bifilar coil are disclosed. The heating element assembly includes two components, each component formed from heating element wire. The two components are spatially positioned and electrically arranged, relative to each other, so that an electrical current applied to the heating element assembly simultaneously travels through the two components in opposite directions.
摘要翻译： 公开了加热元件组件，加热元件组件的加热炉，形成加热元件组件的方法，形成加热炉的方法和减小双线圈中的磁场的方法。 加热元件组件包括两个部件，每个部件由加热元件线形成。 两个部件相对于彼此在空间上定位和电气布置，使得施加到加热元件组件的电流同时沿相反方向穿过两个部件。
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2.发明授权Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing 失效用于在快速热处理期间补偿半导体晶片的温度测量误差的装置和方法
公开(公告)号：US4969748A
公开(公告)日：1990-11-13
申请号：US337628
申请日：1989-04-13
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/522 , H01L21/67115 , G01J2005/0051 , G01J5/0846
摘要： The present invention is a method and apparatus for calibrating a temperature feedback value in a wafer processing chamber to automatically compensate for variations in infrared emissions from a heated semiconductor wafer due to variations in composition and coatings from wafer to wafer. A calibration wafer with an imbedded thermocouple is used to generate a table relating actual wafer temperatures to power supplied to the heating chamber and infrared emissions detected by a pyrometer. A sample wafer of a batch to be processed is subsequently placed in the chamber at a known power level, and any difference between the detected infrared emission value and the value in the table is used to adjust the entire table according to a first predetermined formula or table. Before each wafer is processed, a known source of infrared light is reflected off the wafer and detected. The reflected light value is compared to a reflection measurement for the sample wafer. The difference in reflection measurements is correlated to emissions from heating, and the calibration table is fine-tuned with the correlation value according to a second predetermined formula or table to account for variations in emissions between individual wafers due to variances in wafer surface conditions.
摘要翻译： 本发明是用于校准晶片处理室中的温度反馈值的方法和装置，以自动补偿来自加热的半导体晶片的红外发射的变化，这是由于晶片与晶片的组成和涂层的变化。 具有嵌入式热电偶的校准晶片用于产生将实际晶片温度与供应到加热室的功率和由高温计检测到的红外发射相关的表格。 随后将待处理批次的样品晶片以已知功率水平放置在腔室中，并且使用检测到的红外发射值与表中的值之间的任何差异来根据第一预定公式调整整个工作台，或 表。 在每个晶片被处理之前，已知的红外光源从晶片反射并被检测。 将反射光值与样品晶片的反射测量进行比较。 反射测量的差异与来自加热的发射相关，并且校准表根据第二预定公式或表通过相关值进行微调，以考虑由于晶片表面条件的变化而导致的各个晶片之间的发射变化。
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3.发明授权Pulsewidth modulated pressure control system for chemical vapor deposition apparatus 失效用于化学气相沉积设备的脉宽调制压力控制系统
公开(公告)号：US4728869A
公开(公告)日：1988-03-01
申请号：US845212
申请日：1986-03-27
申请人： Noel H. Johnson , Gary C. Elliott
发明人： Noel H. Johnson , Gary C. Elliott
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , G05D16/20 , H02P5/16
CPC分类号： C23C16/45557 , C23C16/4412 , C23C16/52 , G05D16/2066 , Y10S388/90 , Y10S388/91 , Y10S388/929 , Y10S388/933
摘要： A low pressure control system for chemical vapor deposition (CVD) apparatus, including a vacuum pressure chamber and an exhaust pump, is provided by a vacuum pump DC motor which is supplied power from a DC motor speed controller coupled to a DC control input signal from a pulsewidth modulation DC converter. The converter receives a single pulsewidth modulated pulse train having its percentage of modulation controlled in accordance with a DC to pulsewidth modulation controller which operates in accordance with the difference between a pair of DC input signals corresponding to the actual pressure inside the vacuum pressure chamber and a desired or set point pressure respectively. The vacuum pump motor speed and accordingly the exhaust pump is controlled with a high degree of precision, thereby providing improved coating uniformity of semiconductor wafers being fabricated by the CVD apparatus.
摘要翻译： 包括真空压力室和排气泵的化学气相沉积（CVD）装置的低压控制系统由真空泵直流电动机提供，该真空泵直流电动机由直流电动机速度控制器供电， 脉宽调制DC转换器。 转换器接收单个脉宽调制脉冲串，其脉宽调制百分比根据直流 - 脉冲宽度调制控制器控制，该脉冲宽度调制控制器根据与真空压力室内的实际压力相对应的一对直流输入信号之间的差异操作， 分别需要或设定点压力。 真空泵电机的转速以及相应的排气泵被高精度地控制，从而提供由CVD装置制造的半导体晶片的改进的涂层均匀性。
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公开(公告)号：US07368832B2
公开(公告)日：2008-05-06
申请号：US10671777
申请日：2003-09-29
CPC分类号： H02M5/2573 , H02J3/14 , H02M2001/008 , H02M2005/2937 , Y10T307/414
摘要： A circuit is provided that provides for the same power characteristics to an assembly of electrical resistive elements wired in parallel as to the assembly as wired in series. An input power source provides electrical resistive power to a plurality of load elements, wherein the plurality of load elements are connected in parallel to each other. A plurality of power splitters divide the power source into separate and equal power subsources such that there is one power splitter and one power subsource for each load element, wherein the power provided to each of the plurality of load elements is equal to the power of the electrical power source. Redundancy and fault tolerance is provided to the circuitry by permitting remaining load elements to continue to operate should one or more load elements fail.
摘要翻译： 提供了一种电路，其提供与组件串联布置的电阻元件组合相同的功率特性。 输入电源向多个负载元件提供电阻功率，其中多个负载元件彼此并联连接。 多个功率分配器将电源分成单独的和相等的功率子源，使得每个负载元件具有一个功率分配器和一个功率子源，其中提供给多个负载元件中的每一个的功率等于 电源。 如果一个或多个负载元件发生故障，则通过允许剩余的负载元件继续工作，向电路提供冗余和容错。
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公开(公告)号：US07012538B2
公开(公告)日：2006-03-14
申请号：US10619561
申请日：2003-07-16
IPC分类号： B60Q1/00
CPC分类号： H05B1/0233 , G01N17/00 , H05B1/0291
摘要： A method for monitoring the condition of a heating element involving installing the heating element in a location and setting the initial composition Ci of the material as a reference baseline at an initial time Ti corresponding to said installation of the heating element. Data is then collected reflecting the subsequent composition Cs of the heating element material after a subsequent time Ts at the installed location and any change in the material composition of the heating element between Ti and Ts is monitored. An alarm is sent when the change reaches a threshold value indicating a possible failure condition. According to one embodiment, an impedance monitor is provided that calculates and compares impedance at the required levels of accuracy to determine changes in material composition. The impedance monitor, or portions thereof can be embedded within a microcontroller for increased portability and functionality.
摘要翻译： 一种用于监测加热元件的状态的方法，包括将加热元件安装在位置，并将材料的初始组成C i i i i i在初始时间T i i / SUB>对应于加热元件的所述安装。 然后在安装的位置的随后的时间T s之后收集反映加热元件材料的后续组成C'S的数据，并且加热元件的材料组成的任何变化 在T＆lt; I＆gt;和T SUB之间进行监视。 当变化达到指示可能的故障条件的阈值时发送报警。 根据一个实施例，提供阻抗监视器，其计算并比较所需精度水平处的阻抗以确定材料组成的变化。 阻抗监视器或其部分可以嵌入在微控制器内以增加便携性和功能性。
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6.发明授权Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing 失效用于在快速热处理期间补偿半导体晶片的温度测量误差的装置和方法
公开(公告)号：US4984902A
公开(公告)日：1991-01-15
申请号：US510357
申请日：1990-04-17
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/522 , H01L21/67115 , G01J2005/0051 , G01J5/0846
摘要： The present invention is an apparatus for calibrating a temperature feedback value in a water processing chamber to automatically compensate for variations in infrared emissions from a heated semiconductor wafer due to variations in composition and coatings from wafer to wafer. A calibration wafer with an imbedded thermocouple is used to generate a table relating actual wafer temperatures to power supplied to the heating chamber and infrared emissions detected by a pyrometer. A sample wafer of a batch to be processed is subsequently placed in the chamber at a known power level, and any difference between the detected infrared emission value and the value in the table is used to adjust the entire table according to a first predetermined formula or table. Before each wafer is processed, a known source of infrared light is reflected off the wafer and detected. The reflected light value is compared to a reflection measurement for the sample wafer. The difference in reflection measurements is correlated to emissions from heating, and the calibration table is fine-tuned with the correlation value according to a second predetermined formula or table to account for variations in emissions between individual wafers due to variances in wafer surface conditions.
摘要翻译： 本发明是用于校准水处理室中的温度反馈值的装置，以自动补偿来自加热的半导体晶片的红外发射的变化，这是由于晶片与晶片的组成和涂层的变化。 具有嵌入式热电偶的校准晶片用于产生将实际晶片温度与供应到加热室的功率和由高温计检测到的红外发射相关的表格。 随后将待处理批次的样品晶片以已知功率水平放置在腔室中，并且使用检测到的红外发射值与表中的值之间的任何差异来根据第一预定公式调整整个工作台，或 表。 在每个晶片被处理之前，已知的红外光源从晶片反射并被检测。 将反射光值与样品晶片的反射测量进行比较。 反射测量的差异与来自加热的发射相关，并且校准表根据第二预定公式或表通过相关值进行微调，以考虑由于晶片表面条件的变化而导致的各个晶片之间的发射变化。
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公开(公告)号：US06956489B2
公开(公告)日：2005-10-18
申请号：US10196160
申请日：2002-07-17
CPC分类号： H05B1/0233 , G01N17/00 , H05B1/0291
摘要： A method for monitoring the condition of an electric current-carrying heating element involving installing the heating element in a location and setting the initial composition Ci of the material as a reference baseline at an initial time Ti corresponding to said installation of the heating element. Data is then collected reflecting the subsequent composition Cs of the heating element material after a subsequent time Ts at the installed location and any change in the material composition of the heating element between Ti and Ts is monitored. An alarm is sent when the change reaches a threshold value indicating a possible failure condition. According to one embodiment, an impedance monitor is provided that calculates and compares impedance at the required levels of accuracy to determine changes in material composition. The impedance monitor, or portions thereof may be embedded within a microcontroller for increased portability and functionality.
摘要翻译： 一种用于监视载流加热元件的状态的方法，包括将加热元件安装在一个位置，并将材料的初始组成C i i i N在初始时间T i 对应于所述加热元件的安装。 然后在安装的位置的随后的时间T s之后收集反映加热元件材料的后续组成C'S的数据，并且加热元件的材料组成的任何变化 在T＆lt; I＆gt;和T SUB之间进行监视。 当变化达到指示可能的故障条件的阈值时发送报警。 根据一个实施例，提供阻抗监视器，其计算并比较所需精度水平处的阻抗以确定材料组成的变化。 阻抗监视器或其部分可以嵌入在微控制器内以增加便携性和功能性。
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