METHOD OF INITIALIZING MAGNETIC MEMORY ELEMENT
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    发明申请
    METHOD OF INITIALIZING MAGNETIC MEMORY ELEMENT 有权
    初始化磁记忆元件的方法

    公开(公告)号:US20110199818A1

    公开(公告)日:2011-08-18

    申请号:US13120626

    申请日:2009-10-29

    IPC分类号: G11C11/14

    摘要: An initialization method is provided for a magnetic memory element including: a data recording layer having perpendicular magnetic anisotropy which includes: a first magnetization fixed region, a second magnetization fixed region, and a magnetization free region coupled to the first magnetization fixed region and the second magnetization fixed region, the data recording layer being structure so that the coercive force of the first magnetization fixed region being different from that of the second magnetization fixed region. The initialization method includes steps of: directing the magnetizations of the first magnetization fixed region, the second magnetization fixed region and the magnetization free region in the same direction; and applying a magnetic field having both components perpendicular to and parallel to the magnetic anisotropy of the data recording layer to the data recording layer.

    摘要翻译: 提供了一种用于磁存储元件的初始化方法,包括:具有垂直磁各向异性的数据记录层,其包括:第一磁化固定区域,第二磁化固定区域和耦合到第一磁化固定区域的无磁化区域, 磁化固定区域,数据记录层的结构使得第一磁化固定区域的矫顽力与第二磁化固定区域的矫顽力不同。 该初始化方法包括以下步骤:将第一磁化固定区域,第二磁化固定区域和无磁化区域的磁化指向相同方向; 以及将具有与数据记录层的磁各向异性垂直并平行的两个分量的磁场施加到数据记录层。