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    Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates
    3.
    发明授权
    Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates 有权
    在工程衬底上集成硅CMOS和AlGaN / GaN宽带放大器的方法

    公开(公告)号：US07420226B2

    公开(公告)日：2008-09-02

    申请号：US11326443

    申请日：2006-01-06

    申请人： Godfrey Augustine ,  Deborah Partlow ,  Alfred Paul Turley ,  Thomas Knight ,  Jeffrey D. Hartman

    发明人： Godfrey Augustine ,  Deborah Partlow ,  Alfred Paul Turley ,  Thomas Knight ,  Jeffrey D. Hartman

    IPC分类号： H01L29/34

    CPC分类号： H01L21/84 ,  H01L21/187 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/1203 ,  H01L29/2003

    摘要： High-speed silicon CMOS circuits and high-power AlGaN/GaN amplifiers are integrated on the same wafer. A thin layer of high resistivity silicon is bonded on a substrate. Following the bonding, an AlGaN/GaN structure is grown over the bonded silicon layer. A silicon nitride or a silicon oxide layer is then deposited over the AlGaN/GaN structure. Following this, a thin layer of silicon is bonded to the silicon nitride/silicon oxide layer. An area for the fabrication of AlGaN/GaN devices is defined, and the silicon is etched away from those areas. Following this, CMOS devices are fabricated on the silicon layer and AlGaN/GaN devices fabricated on the AlGaN/GaN surface.

    摘要翻译： 高速硅CMOS电路和大功率AlGaN / GaN放大器集成在同一晶圆上。 一层薄层的高电阻率硅结合在基片上。 在接合之后，在结合的硅层上生长AlGaN / GaN结构。 然后在AlGaN / GaN结构上沉积氮化硅或氧化硅层。 之后，将一薄层硅结合到氮化硅/氧化硅层上。 定义了用于制造AlGaN / GaN器件的区域，并且从这些区域蚀刻硅。 之后，在硅层和在AlGaN / GaN表面上制造的AlGaN / GaN器件上制造CMOS器件。

    Prosthetic implant valve cover
    4.
    发明授权
    Prosthetic implant valve cover 失效
    假体植入阀盖

    公开(公告)号：US6099566A

    公开(公告)日：2000-08-08

    申请号：US146905

    申请日：1998-09-04

    申请人： Kevin Vonderharr ,  Jason T. Papenfuss ,  Stephen M. Trinter ,  Paul Turley

    发明人： Kevin Vonderharr ,  Jason T. Papenfuss ,  Stephen M. Trinter ,  Paul Turley

    IPC分类号： A61F2/12

    CPC分类号： A61F2/12

    摘要： A valve cover for a prosthetic implant. The valve cover is adhered to the prosthetic implant and covers the fill valve. The valve cover has a flexible body having an upper portion, a central portion and a lower portion. A plug extends from the bottom surface of the central portion of the valve cover body. A continuous textured peripheral area is disposed on the bottom surface of the flexible body and which extends through the upper portion and to the lower portion through an axis intersecting the valve entrance. The continuous peripheral area is adhered to the prosthetic implant body whereby the plug is aligned with the fill valve entrance. Lifting of the lower portion of the valve cover provides access to the fill valve of the prosthetic implant.

    摘要翻译： 用于假体植入物的阀盖。 阀盖粘附到假体植入物并覆盖填充阀。 阀盖具有柔性体，其具有上部，中部和下部。 塞子从阀盖体的中心部分的底表面延伸。 连续纹理化的外围区域设置在柔性体的底表面上，并且通过与阀入口相交的轴线延伸穿过上部和下部。 连续的周边区域粘附到假体植入体上，由此塞子与填充阀入口对准。 提升阀盖的下部部分提供进入假体植入物的填充阀。