公开(公告)号：US20120230099A1

公开(公告)日：2012-09-13

申请号：US13477884

申请日：2012-05-22

申请人： Shyh-Shyuan SHEU ,  Pei-Chia Chinag ,  Wen-Pin Lin

发明人： Shyh-Shyuan SHEU ,  Pei-Chia Chinag ,  Wen-Pin Lin

IPC分类号： G11C11/46

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C2013/0092

摘要： A phase change memory with an operating current that can be gradually increased or gradually decreased. The phase change memory has a phase change storage element, a transistor, and a control circuit. The transistor is operable to adjust the operating current flowing through the phase change storage element. The transistor has a first terminal coupled to a voltage source, a second terminal coupled to the phase change storage element, and a control terminal receiving a control signal from the control circuit. The control circuit is specially designed to limit the transistor in a linear region.

摘要翻译： 具有可逐渐增加或逐渐减小的工作电流的相变存储器。 相变存储器具有相变存储元件，晶体管和控制电路。 晶体管可操作以调节流过相变存储元件的工作电流。 晶体管具有耦合到电压源的第一端子，耦合到相变存储元件的第二端子以及从控制电路接收控制信号的控制端子。 控制电路专门设计用于将晶体管限制在线性区域。