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公开(公告)号：US06714578B2
公开(公告)日：2004-03-30
申请号：US10165779
申请日：2002-06-06
IPC分类号： H01S309
CPC分类号： H01S3/16 , H01S3/1608 , H01S3/1628
摘要： The present invention uses a novel crystal host to minimize parasitic upconversion and lifetime quenching processes by increasing the distance between active dopant ions in the matrix. As a result, erbium that could previously only be useful at low levels may now be incorporated at much higher concentrations without adverse effects. In addition, this host has long excited-state-lifetimes, making it more effective as an energy storage device for pulsed laser applications.
摘要翻译： 本发明使用新颖的晶体主机通过增加基质中活性掺杂剂离子之间的距离来最小化寄生上变频和寿命骤冷过程。 因此，以前只能在低水平下使用的铒现在可以以更高的浓度掺入而没有不利影响。 此外，该主机具有长激发态寿命，使其作为脉冲激光应用的储能装置更为有效。
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公开(公告)号：US5611856A
公开(公告)日：1997-03-18
申请号：US245774
申请日：1994-05-19
摘要： The present invention provides a method for producing single crystals of a group II-IV-V.sub.2 and group I-III-VI.sub.2 compounds by synthesizing compound material from its constituents and separately melting and refreezing the material in a transparent furnace while observing crystal growth.
摘要翻译： 本发明提供一种通过从其组分合成化合物并在观察晶体生长的同时在透明炉中分别熔化和再结晶材料来制备II-IV-V2族和I-III-VI2族化合物的单晶的方法。
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3.发明授权Nonlinear optical CdSiP2 crystal and producing method and devices therefrom 有权非线性光学CdSiP2晶体及其制造方法和装置公开(公告)号：US08379296B2
公开(公告)日：2013-02-19
申请号：US12809103
申请日：2009-10-23
CPC分类号： G02F1/35 , A61B18/20 , G02F1/3551
摘要： CdSiP2 crystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 μm, 1.55 μm, and 2 μm lasers to wavelengths between 2 μm and 10 μm. Due to the high thermal conductivity and low losses of the claimed CdSiP2 crystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 μm laser source for use as a medical laser scalpel is also disclosed, in which a CdSiP2 crystal is configured for non-critical phase matching, pumped by a 1064 nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 μm.
摘要翻译： 公开了适合用作非线性光学器件的尺寸和光学质量的CdSiP 2晶体以及基于此的NLO器件。 还公开了通过来自化学计量熔体的定向凝固来生长晶体的方法。 所公开的NLO晶体具有比可由固体激光器泵浦的现有技术晶体更高的非线性系数，并且对于在2μm和10μm之间的波长的1.06μm，1.55μm和2μm激光器的频移特别有用。 由于所要求的CdSiP2晶体的高导热性和低损耗，平均输出功率可以超过10W而没有严重的热透镜。 还公开了用作医疗激光手术刀的6.45μm激光源，其中CdSiP2晶体被配置用于非临界相位匹配，由1064nm Nd：YAG激光器泵浦，并被温度调节以产生6.45μm的输出 。
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4.发明授权Low-phonon-frequency chalcogenide crystalline hosts for rare earth lasers operating beyond three microns 失效用于超过三微米的稀土激光器的低声子频率硫族化物晶体主机
公开(公告)号：US6047013A
公开(公告)日：2000-04-04
申请号：US235650
申请日：1999-01-22
申请人： Stephen A. Payne , Ralph H. Page , Kathleen I. Schaffers , Michael C. Nostrand , William F. Krupke , Peter G. Schunemann
发明人： Stephen A. Payne , Ralph H. Page , Kathleen I. Schaffers , Michael C. Nostrand , William F. Krupke , Peter G. Schunemann
IPC分类号： H01S3/16
CPC分类号： H01S3/16 , H01S3/1603 , H01S3/163
摘要： The invention comprises a RE-doped MA.sub.2 X.sub.4 crystalline gain medium, where M includes a divalent ion such as Mg, Ca, Sr, Ba, Pb, Eu, or Yb; A is selected from trivalent ions including Al, Ga, and In; X is one of the chalcogenide ions S, Se, and Te; and RE represents the trivalent rare earth ions. The MA.sub.2 X.sub.4 gain medium can be employed in a laser oscillator or a laser amplifier. Possible pump sources include diode lasers, as well as other laser pump sources. The laser wavelengths generated are greater than 3 microns, as becomes possible because of the low phonon frequency of this host medium. The invention may be used to seed optical devices such as optical parametric oscillators and other lasers.
摘要翻译： 本发明包括RE掺杂的MA2X4晶体增益介质，其中M包括二价离子如Mg，Ca，Sr，Ba，Pb，Eu或Yb; A选自包括Al，Ga和In的三价离子; X是硫属元素离子S，Se和Te之一; RE表示三价稀土离子。 MA2X4增益介质可用于激光振荡器或激光放大器。 可能的泵浦源包括二极管激光器以及其他激光泵源。 所产生的激光波长大于3微米，因为该主机介质的低声子频率是可能的。 本发明可以用于种子光学装置，例如光参量振荡器和其它激光器。
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5.发明申请NONLINEAR OPTICAL CdSiP2 CRYSTAL AND PRODUCING METHOD AND DEVICES THEREFROM 有权非线性光学CdSiP2晶体及其制造方法及器件公开(公告)号：US20110054451A1
公开(公告)日：2011-03-03
申请号：US12809103
申请日：2009-10-23
CPC分类号： G02F1/35 , A61B18/20 , G02F1/3551
摘要： CdSiP2 crystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 μm, 1.55 μm, and 2 μm lasers to wavelengths between 2 μm and 10 μm. Due to the high thermal conductivity and low losses of the claimed CdSiP2 crystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 μm laser source for use as a medical laser scalpel is also disclosed, in which a CdSiP2 crystal is configured for non-critical phase matching, pumped by a 1064 nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 μm.
摘要翻译： 公开了适合用作非线性光学器件的尺寸和光学质量的CdSiP 2晶体以及基于此的NLO器件。 还公开了通过来自化学计量熔体的定向凝固来生长晶体的方法。 所公开的NLO晶体具有比可由固体激光器泵浦的现有技术晶体更高的非线性系数，并且对于在2μm和10μm之间的波长的1.06μm，1.55μm和2μm激光器的频移特别有用。 由于所要求的CdSiP2晶体的高导热性和低损耗，平均输出功率可以超过10W而没有严重的热透镜。 还公开了用作医疗激光手术刀的6.45μm激光源，其中CdSiP2晶体被配置用于非临界相位匹配，由1064nm Nd：YAG激光器泵浦，并被温度调节以产生6.45μm的输出 。
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