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1.发明授权Low-phonon-frequency chalcogenide crystalline hosts for rare earth lasers operating beyond three microns 失效用于超过三微米的稀土激光器的低声子频率硫族化物晶体主机
公开(公告)号：US6047013A
公开(公告)日：2000-04-04
申请号：US235650
申请日：1999-01-22
申请人： Stephen A. Payne , Ralph H. Page , Kathleen I. Schaffers , Michael C. Nostrand , William F. Krupke , Peter G. Schunemann
发明人： Stephen A. Payne , Ralph H. Page , Kathleen I. Schaffers , Michael C. Nostrand , William F. Krupke , Peter G. Schunemann
IPC分类号： H01S3/16
CPC分类号： H01S3/16 , H01S3/1603 , H01S3/163
摘要： The invention comprises a RE-doped MA.sub.2 X.sub.4 crystalline gain medium, where M includes a divalent ion such as Mg, Ca, Sr, Ba, Pb, Eu, or Yb; A is selected from trivalent ions including Al, Ga, and In; X is one of the chalcogenide ions S, Se, and Te; and RE represents the trivalent rare earth ions. The MA.sub.2 X.sub.4 gain medium can be employed in a laser oscillator or a laser amplifier. Possible pump sources include diode lasers, as well as other laser pump sources. The laser wavelengths generated are greater than 3 microns, as becomes possible because of the low phonon frequency of this host medium. The invention may be used to seed optical devices such as optical parametric oscillators and other lasers.
摘要翻译： 本发明包括RE掺杂的MA2X4晶体增益介质，其中M包括二价离子如Mg，Ca，Sr，Ba，Pb，Eu或Yb; A选自包括Al，Ga和In的三价离子; X是硫属元素离子S，Se和Te之一; RE表示三价稀土离子。 MA2X4增益介质可用于激光振荡器或激光放大器。 可能的泵浦源包括二极管激光器以及其他激光泵源。 所产生的激光波长大于3微米，因为该主机介质的低声子频率是可能的。 本发明可以用于种子光学装置，例如光参量振荡器和其它激光器。
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公开(公告)号：US06714578B2
公开(公告)日：2004-03-30
申请号：US10165779
申请日：2002-06-06
IPC分类号： H01S309
CPC分类号： H01S3/16 , H01S3/1608 , H01S3/1628
摘要： The present invention uses a novel crystal host to minimize parasitic upconversion and lifetime quenching processes by increasing the distance between active dopant ions in the matrix. As a result, erbium that could previously only be useful at low levels may now be incorporated at much higher concentrations without adverse effects. In addition, this host has long excited-state-lifetimes, making it more effective as an energy storage device for pulsed laser applications.
摘要翻译： 本发明使用新颖的晶体主机通过增加基质中活性掺杂剂离子之间的距离来最小化寄生上变频和寿命骤冷过程。 因此，以前只能在低水平下使用的铒现在可以以更高的浓度掺入而没有不利影响。 此外，该主机具有长激发态寿命，使其作为脉冲激光应用的储能装置更为有效。
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公开(公告)号：US5611856A
公开(公告)日：1997-03-18
申请号：US245774
申请日：1994-05-19
摘要： The present invention provides a method for producing single crystals of a group II-IV-V.sub.2 and group I-III-VI.sub.2 compounds by synthesizing compound material from its constituents and separately melting and refreezing the material in a transparent furnace while observing crystal growth.
摘要翻译： 本发明提供一种通过从其组分合成化合物并在观察晶体生长的同时在透明炉中分别熔化和再结晶材料来制备II-IV-V2族和I-III-VI2族化合物的单晶的方法。
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