公开(公告)号：US07315678B2

公开(公告)日：2008-01-01

申请号：US11300639

申请日：2005-12-13

申请人： Peter Siegel ,  Cavour Yeh ,  Fred Shimabukuro ,  Scott Fraser

发明人： Peter Siegel ,  Cavour Yeh ,  Fred Shimabukuro ,  Scott Fraser

IPC分类号： G02B6/02

CPC分类号： G02B6/02361 ,  A61B5/0084 ,  G02B6/02328 ,  G02B6/02347 ,  G02B6/032 ,  G02B6/10

摘要： The present invention relates to the field of radio-frequency (RF) waveguides. More specifically, the present invention pertains to a method and apparatus that provides ultra-low-loss RF waveguide structures targeted between approximately 300 GHz and approximately 30 THz. The RF waveguide includes a hollow core and a flexible honeycomb, periodic-bandgap structure surrounding the hollow core. The flexible honeycomb, periodic-bandgap structure is formed of a plurality of tubes formed of a dielectric material such as of low-loss quartz, polyethylene, or high-resistivity silicon. Using the RF waveguide, a user may attach a terahertz signal source to the waveguide and pass signals through the waveguide, while a terahertz signal receiver receives the signals.

摘要翻译： 本发明涉及射频（RF）波导领域。 更具体地，本发明涉及提供目标在大约300GHz和大约30THz之间的超低损耗RF波导结构的方法和装置。 RF波导包括中空芯和围绕中空芯的柔性蜂窝状周期性带隙结构。 柔性蜂窝状周期带隙结构由多层由诸如低损耗石英，聚乙烯或高电阻率硅的介电材料形成的管形成。 使用RF波导，用户可以将太赫兹信号源附接到波导并且通过波导传递信号，而太赫兹信号接收器接收信号。

公开(公告)号：US20060261433A1

公开(公告)日：2006-11-23

申请号：US11439625

申请日：2006-05-23

申请人： Harish Manohara ,  Brian Hunt ,  Erich Schlecht ,  Peter Siegel ,  Eric Wong

发明人： Harish Manohara ,  Brian Hunt ,  Erich Schlecht ,  Peter Siegel ,  Eric Wong

IPC分类号： H01L21/00

CPC分类号： H01L29/872 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/66143

摘要： Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.

摘要翻译： 描述了使用具有钛肖特基和铂欧姆接触的半导体单壁纳米管（s-SWNT）的肖特基二极管，用于高频应用。 二极管是通过s-SWNT上的异种金属触点的成角度蒸发来制造的。 这些器件表现出具有大于-15V的大反向偏压击穿电压的整流特性。为了降低串联电阻，在单个器件中并行生长多个SWNT，并且金属管被选择性地烧毁。 在低偏差下，这些二极管的理想因素在1.5至1.9的范围内。 在2.5THz（THz）频率下，这些二极管作为室温下的直接检测器的建模，表明与现有技术的砷化镓销售状态肖特基二极管相当的噪声等效功率（NEP）在10- 13 W /平方根（√）Hz。

公开(公告)号：US4212883A

公开(公告)日：1980-07-15

申请号：US900386

申请日：1978-04-24

申请人： Peter Siegel ,  Engelbert Kuhle ,  Ingeborg Hammann ,  Bernhard Homeyer ,  Wolfgang Behrenz

发明人： Peter Siegel ,  Engelbert Kuhle ,  Ingeborg Hammann ,  Bernhard Homeyer ,  Wolfgang Behrenz

IPC分类号： A01N47/24 ,  C07D317/24 ,  C07D317/46 ,  A01N9/16 ,  C07D339/02

CPC分类号： C07D317/24 ,  A01N47/24 ,  C07D317/46

摘要： Sulfonic acid-N'-methylamide-N'-sulfenyl-N-methyl-carbamic acid esters of the formula ##STR1## in which R.sup.1 is dialkylamino with 1-4 carbon atoms in each alkyl group, phenyl substituted in the o- or m-position by halogen or by alkyl with 1-4 carbon atoms, or phenyl substituted in the o-, m- or p-position by NO.sub.2, CF.sub.3 or CN, andR.sup.2 is phenyl, naphthyl, benzodioxolanyl or indanyl; phenyl, naphthyl, benzodioxolanyl or indanyl substituted by trihalogenomethyl, halogen, nitro, cyano, formamidino, dioxanyl or dioxolanyl, or by alkyl, alkenyl, alkynyl, alkoxy, alkenoxy, alkynoxy, alkylmercapto, alkenylmercapto or dialkylamino wherein each hydrocarbon portion has 1-4 carbon atoms; cycloalkyl of 5-7 carbon atoms, or ##STR2## in which R .sup.3 and R.sup.4 each independently is cyano or alkyl, alkoxy, alkylthio or alkoxycarbonyl with 1-4 carbon atoms in each alkyl group, or R.sup.3 and R.sup.4 together form a ring, or, provided that R.sup.1 is a NO.sub.2 -substituted phenyl, R.sup.3 and R.sup.4 may be dihydrobenzofuranyl or dihydrobenzofuranyl substituted by alkyl of 1-4 carbon atoms,which possess insecticidal, acaricidal, nematicidal, fungicidal and herbicidal properties.

摘要翻译： 其中R 1是每个烷基中具有1-4个碳原子的二烷基氨基，在o取代的苯基的磺酸-N'-甲酰胺-N'-磺酰基-N-甲基 - 氨基甲酸酯 - 或 - 位置被卤素或具有1-4个碳原子的烷基取代，或在由O-，m-或p-位置被NO 2，CF 3或CN取代的苯基，R 2是苯基，萘基，苯并二恶烷基或茚满基; 苯基，萘基，苯并二氧杂环戊烷基或被三卤甲基，卤素，硝基，氰基，甲酰氨基，二烷基或二氧戊环基取代的茚满基，或被烷基，烯基，炔基，烷氧基，链烯氧基，炔氧基，烷基巯基，烯基巯基或二烷基氨基取代， 碳原子 或者其中R 3和R 4各自独立地为氰基或烷基，烷氧基，烷硫基或烷基中具有1-4个碳原子的烷氧基羰基，或者R 3和R 4一起形成环， 或者如果R 1是NO 2取代的苯基，则R 3和R 4可以是被1-4个碳原子的烷基取代的二氢苯并呋喃基或二氢苯并呋喃基，其具有杀虫，杀螨，杀线虫，杀真菌和除草性质。

公开(公告)号：US20080315181A1

公开(公告)日：2008-12-25

申请号：US12072320

申请日：2008-02-25

申请人： Harish Manohara ,  Brian Hunt ,  Erich Schlecht ,  Peter Siegel ,  Eric Wong

发明人： Harish Manohara ,  Brian Hunt ,  Erich Schlecht ,  Peter Siegel ,  Eric Wong

IPC分类号： H01L29/12 ,  H01L21/205

CPC分类号： H01L29/872 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/66143

摘要： Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.

摘要翻译： 描述了使用具有钛肖特基和铂欧姆接触的半导体单壁纳米管（s-SWNT）的肖特基二极管，用于高频应用。 二极管是通过s-SWNT上的异种金属触点的成角度蒸发来制造的。 这些器件表现出具有大于-15V的大反向偏压击穿电压的整流特性。为了降低串联电阻，在单个器件中并行生长多个SWNT，并且金属管被选择性地烧毁。 在低偏差下，这些二极管的理想因素在1.5至1.9的范围内。 在2.5THz（THz）频率下，这些二极管作为室温下的直接检测器的建模，表明与现有技术的砷化镓销售状态肖特基二极管相当的噪声等效功率（NEP）在10- 13 W /平方根（√）Hz。

公开(公告)号：US20060165360A1

公开(公告)日：2006-07-27

申请号：US11300639

申请日：2005-12-13

申请人： Peter Siegel ,  Cavour Yeh ,  Fred Shimabukuro ,  Scott Fraser

发明人： Peter Siegel ,  Cavour Yeh ,  Fred Shimabukuro ,  Scott Fraser

IPC分类号： G02B6/032

CPC分类号： G02B6/02361 ,  A61B5/0084 ,  G02B6/02328 ,  G02B6/02347 ,  G02B6/032 ,  G02B6/10

摘要： The present invention relates to the field of radio-frequency (RF) waveguides. More specifically, the present invention pertains to a method and apparatus that provides ultra-low-loss RF waveguide structures targeted between approximately 300 GHz and approximately 30 THz. The RF waveguide includes a hollow core and a flexible honeycomb, periodic-bandgap structure surrounding the hollow core. The flexible honeycomb, periodic-bandgap structure is formed of a plurality of tubes formed of a dielectric material such as of low-loss quartz, polyethylene, or high-resistivity silicon. Using the RF waveguide, a user may attach a terahertz signal source to the waveguide and pass signals through the waveguide, while a terahertz signal receiver receives the signals.

摘要翻译： 本发明涉及射频（RF）波导领域。 更具体地，本发明涉及提供目标在大约300GHz和大约30THz之间的超低损耗RF波导结构的方法和装置。 RF波导包括中空芯和围绕中空芯的柔性蜂窝状周期性带隙结构。 柔性蜂窝状周期带隙结构由多层由诸如低损耗石英，聚乙烯或高电阻率硅的介电材料形成的管形成。 使用RF波导，用户可以将太赫兹信号源附接到波导并且通过波导传递信号，而太赫兹信号接收器接收信号。

公开(公告)号：US20060016997A1

公开(公告)日：2006-01-26

申请号：US10956734

申请日：2004-10-01

申请人： Peter Siegel ,  Robert Dengler

发明人： Peter Siegel ,  Robert Dengler

IPC分类号： G01N1/00 ,  G01J3/00 ,  G01J5/00 ,  G01J5/02

CPC分类号： G01N21/3581

摘要： The present invention relates to sub-millimeter wave frequency heterodyne imaging systems. More specifically, the present invention relates to a sub-millimeter wave frequency heterodyne detector system for imaging the magnitude and phase of transmitted power through or reflected power off of mechanically scanned samples at sub-millimeter wave frequencies.