公开(公告)号：US20090078872A1

公开(公告)日：2009-03-26

申请号：US11858296

申请日：2007-09-20

申请人： Kofi Korsah ,  Larry R. Baylor ,  John B. Caughman ,  Roger A. Kisner ,  Philip D. Rack ,  Ilia N. Ivanov

发明人： Kofi Korsah ,  Larry R. Baylor ,  John B. Caughman ,  Roger A. Kisner ,  Philip D. Rack ,  Ilia N. Ivanov

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14649 ,  B82Y30/00 ,  H01L27/14689

摘要： An infrared imaging device and method for making infrared detector(s) having at least one anode, at least one cathode with a substrate electrically connected to a plurality of doped carbon nanostructures; and bias circuitry for applying an electric field between the anode and the cathode such that when infrared photons are absorbed by the nanostructures the emitted field current is modulated. The detectors can be doped with cesium to lower the work function.

摘要翻译： 一种用于制造具有至少一个阳极的红外检测器的红外成像装置和方法，至少一个具有电连接到多个掺杂碳纳米结构的基底的阴极; 以及用于在阳极和阴极之间施加电场的偏置电路，使得当红外光子被纳米结构吸收时，发射的场电流被调制。 检测器可以掺杂铯以降低功函数。

公开(公告)号：US07608824B2

公开(公告)日：2009-10-27

申请号：US11858296

申请日：2007-09-20

申请人： Kofi Korsah ,  Larry R Baylor ,  John B Caughman ,  Roger A Kisner ,  Philip D Rack ,  Ilia N Ivanov

发明人： Kofi Korsah ,  Larry R Baylor ,  John B Caughman ,  Roger A Kisner ,  Philip D Rack ,  Ilia N Ivanov

IPC分类号： G01J5/20

CPC分类号： H01L27/14649 ,  B82Y30/00 ,  H01L27/14689

摘要： An infrared imaging device and method for making infrared detector(s) having at least one anode, at least one cathode with a substrate electrically connected to a plurality of doped carbon nanostructures; and bias circuitry for applying an electric field between the anode and the cathode such that when infrared photons are absorbed by the nanostructures the emitted field current is modulated. The detectors can be doped with cesium to lower the work function.

摘要翻译： 一种用于制造具有至少一个阳极的红外检测器的红外成像装置和方法，至少一个具有电连接到多个掺杂碳纳米结构的基底的阴极; 以及用于在阳极和阴极之间施加电场的偏置电路，使得当红外光子被纳米结构吸收时，发射的场电流被调制。 检测器可以掺杂铯以降低功函数。

公开(公告)号：US5581150A

公开(公告)日：1996-12-03

申请号：US542520

申请日：1995-10-13

申请人： Philip D. Rack ,  Paul H. Holloway ,  Sey-Shing Sun ,  Eric R. Dickey ,  Christian F. Schaus ,  Richard T. Tuenge ,  Christopher N. King

发明人： Philip D. Rack ,  Paul H. Holloway ,  Sey-Shing Sun ,  Eric R. Dickey ,  Christian F. Schaus ,  Richard T. Tuenge ,  Christopher N. King

IPC分类号： C09K11/62 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H01J1/62 ,  H01J63/04

CPC分类号： C09K11/625 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  Y10S428/917

摘要： A TFEL structure is disclosed that includes first and second electrode layers sandwiching a TFEL stack including at least one insulator layer and a novel three layer laminate structure. The three-layer laminate structure includes an alkaline earth thiogallate phosphor layer, a nucleating layer and an injection layer. The nucleating layer lies between the phosphor layer and the injection layer. The injection layer provides a charge injection function through the nucleating layer for the thiogallate phosphor layer which is of high crystallinity at its interface with the nucleating layer. A preferred injection layer includes indium, for example as the metal or as indium tin oxide. The best material for the nucleating layer is zinc sulfide.

摘要翻译： 公开了一种TFEL结构，其包括夹持包括至少一个绝缘体层和新颖的三层层压结构的TFEL堆叠的第一和第二电极层。 三层层叠结构包括碱土金属硫族镓酸盐荧光体层，成核层和注入层。 成核层位于荧光体层和注入层之间。 注入层通过用于硫代镓荧光体层的成核层提供电荷注入功能，其在与成核层的界面处具有高结晶度。 优选的注入层包括铟，例如作为金属或氧化铟锡。 成核层最好的材料是硫化锌。