公开(公告)号：US20070066027A1

公开(公告)日：2007-03-22

申请号：US11308283

申请日：2006-03-15

Applicant: Hung-Yi Lin ,  Yao-Tian Chow ,  Pin-Ting Liu

Inventor： Hung-Yi Lin ,  Yao-Tian Chow ,  Pin-Ting Liu

IPC: H01L21/76

CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  H04R19/04 ,  H04R31/00

Abstract: A substrate is provided and a plurality of trenches are formed in the front surface of the substrate. Then, a thermal oxide layer is formed on inner walls of the trenches and the front surface of the substrate. Subsequently, a first structural layer is formed on the thermal oxide layer, dopants are implanted into the first structural layer, a second structural layer is formed on the first structural layer, and an annealing process is performed to reduce the stress of the first and second structural layers. Following that, the first and second structural layers are patterned to form diaphragms. Finally, the second structural layer is mounted on a support wafer with a bonding layer, and the back surface of the substrate is etched by deep etching techniques to form back chambers corresponding to the diaphragms. Each back chamber has a vertical sidewall and partially exposes the first structural layer.

Abstract translation: 提供衬底，并且在衬底的前表面中形成多个沟槽。 然后，在沟槽的内壁和基板的前表面上形成热氧化层。 随后，在热氧化物层上形成第一结构层，将掺杂剂注入到第一结构层中，在第一结构层上形成第二结构层，并进行退火处理以减小第一和第二结构层的应力 结构层。 之后，第一和第二结构层被图案化以形成隔膜。 最后，将第二结构层安装在具有接合层的支撑晶片上，并通过深蚀刻技术蚀刻衬底的后表面以形成与隔膜对应的后室。 每个后室具有垂直侧壁并部分地暴露第一结构层。

公开(公告)号：US07456043B2

公开(公告)日：2008-11-25

申请号：US11308283

申请日：2006-03-15

Applicant: Hung-Yi Lin ,  Yao-Tian Chow ,  Pin-Ting Liu

Inventor： Hung-Yi Lin ,  Yao-Tian Chow ,  Pin-Ting Liu

IPC: H01L21/00 ,  H01L21/76

CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  H04R19/04 ,  H04R31/00

Abstract: A substrate is provided and a plurality of trenches are formed in the front surface of the substrate. Then, a thermal oxide layer is formed on inner walls of the trenches and the front surface of the substrate. Subsequently, a first structural layer is formed on the thermal oxide layer, dopants are implanted into the first structural layer, a second structural layer is formed on the first structural layer, and an annealing process is performed to reduce the stress of the first and second structural layers. Following that, the first and second structural layers are patterned to form diaphragms. Finally, the second structural layer is mounted on a support wafer with a bonding layer, and the back surface of the substrate is etched by deep etching techniques to form back chambers corresponding to the diaphragms. Each back chamber has a vertical sidewall and partially exposes the first structural layer.

Abstract translation: 提供衬底，并且在衬底的前表面中形成多个沟槽。 然后，在沟槽的内壁和基板的前表面上形成热氧化层。 随后，在热氧化物层上形成第一结构层，将掺杂剂注入到第一结构层中，在第一结构层上形成第二结构层，并进行退火处理以减小第一和第二结构层的应力 结构层。 之后，第一和第二结构层被图案化以形成隔膜。 最后，将第二结构层安装在具有接合层的支撑晶片上，并通过深蚀刻技术蚀刻衬底的后表面以形成与隔膜对应的后室。 每个后室具有垂直侧壁并部分地暴露第一结构层。

公开(公告)号：US07410821B2

公开(公告)日：2008-08-12

申请号：US11277150

申请日：2006-03-22

Applicant: Yao-Tian Chow ,  Pin-Ting Liu

Inventor： Yao-Tian Chow ,  Pin-Ting Liu

IPC: H01L21/00

CPC classification number: B81C1/00928

Abstract: A substrate having a sacrificial layer and a structural layer disposed on the front surface of the substrate is provided. Thereon an opening is formed on the back surface of the substrate and the sacrificial layer is exposed partially. A wet etching process is performed to etch the sacrificial layer via the opening to form a suspended structure. Finally, a gas injection process is performed. The gas injection process comprises blowing a gas on the suspended structure via the opening and consequently preventing the suspended structure from sticking to the substrate.

Abstract translation: 提供具有设置在基板的前表面上的牺牲层和结构层的基板。 在该基板的背面形成有开口，部分露出牺牲层。 执行湿蚀刻工艺以经由开口蚀刻牺牲层以形成悬挂结构。 最后，进行气体注入处理。 气体注入方法包括通过开口吹入悬浮结构上的气体，从而防止悬浮结构粘附到基底上。

公开(公告)号：US20070105385A1

公开(公告)日：2007-05-10

申请号：US11277150

申请日：2006-03-22

Applicant: Yao-Tian Chow ,  Pin-Ting Liu

Inventor： Yao-Tian Chow ,  Pin-Ting Liu

IPC: H01L21/311

CPC classification number: B81C1/00928

Abstract: A substrate having a sacrificial layer and a structural layer disposed on the front surface of the substrate is provided. Thereon an opening is formed on the back surface of the substrate and the sacrificial layer is exposed partially. A wet etching process is performed to etch the sacrificial layer via the opening to form a suspended structure. Finally, a gas injection process is performed. The gas injection process comprises blowing a gas on the suspended structure via the opening and consequently preventing the suspended structure from sticking to the substrate.

Abstract translation: 提供具有设置在基板的前表面上的牺牲层和结构层的基板。 在该基板的背面形成有开口，部分露出牺牲层。 执行湿蚀刻工艺以经由开口蚀刻牺牲层以形成悬挂结构。 最后，进行气体注入处理。 气体注入方法包括通过开口吹入悬浮结构上的气体，从而防止悬浮结构粘附到基底上。

公开(公告)号：US20070048889A1

公开(公告)日：2007-03-01

申请号：US11164331

申请日：2005-11-18

Applicant: Hung-Yi Lin ,  Pin-Ting Liu ,  Tsung-Hsun Tsai

Inventor： Hung-Yi Lin ,  Pin-Ting Liu ,  Tsung-Hsun Tsai

IPC: H01L21/00

CPC classification number: G01L9/0042

Abstract: A wafer is provided, and a circuit layout including a first piezoresistive device layout and a second piezoresistive device layout is formed on the front surface of the wafer. The first piezoresistive device layout includes a plurality of first nodes and the second piezoresistive device layout includes a plurality of second nodes. Subsequently, a dielectric layer is formed on the circuit layout, and the dielectric layer is patterned to expose either the first nodes or the second nodes. Thereafter, a connection pattern is formed on the dielectric layer to electrically connect the first nodes or the second nodes.

Abstract translation: 提供晶片，并且在晶片的前表面上形成包括第一压阻器件布局和第二压阻器件布局的电路布局。 第一压阻器件布局包括多个第一节点，并且第二压阻器件布局包括多个第二节点。 随后，在电路布局上形成电介质层，并对电介质层进行图案化以暴露第一节点或第二节点。 此后，在电介质层上形成连接图案以电连接第一节点或第二节点。