公开(公告)号：US07442561B2

公开(公告)日：2008-10-28

申请号：US11207895

申请日：2005-08-22

申请人： Ju-Hsin Chi ,  Kun-Jung Wu ,  Pin-Yuan Yu ,  Yu-Chi Lin ,  Yung-Chih Lin

发明人： Ju-Hsin Chi ,  Kun-Jung Wu ,  Pin-Yuan Yu ,  Yu-Chi Lin ,  Yung-Chih Lin

IPC分类号： H01L21/00

CPC分类号： H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of piping defect detection is provided. A semiconductor substrate having an active region and an isolation region is provided, a plurality of semiconductor elements are formed on the semiconductor substrate, a dielectric layer is deposited on the semiconductor substrate and the semiconductor elements, and first and second contact plugs are formed in the dielectric layer to connect the active region and the isolation region respectively. The first contact plug and the second contact plug are illuminated by an electron beam, accumulating charge on the second contact plug, and piping defects are detected between the first contact plug and the second contact plug according to brightness contrast between the first contact plug and the second contact plug.

摘要翻译： 提供了一种管道缺陷检测方法。 提供了具有有源区和隔离区的半导体衬底，在半导体衬底上形成多个半导体元件，在半导体衬底和半导体元件上淀积电介质层，第一和第二接触插塞形成在 电介质层分别连接有源区和隔离区。 第一接触插塞和第二接触插塞由电子束照射，在第二接触插塞上积累电荷，并且根据第一接触插塞和第二接触插塞之间的亮度对比度在第一接触插塞和第二接触插塞之间检测管道缺陷 第二个接触插头

公开(公告)号：US20140071585A1

公开(公告)日：2014-03-13

申请号：US13609739

申请日：2012-09-11

申请人： Pin-Yuan Yu ,  Yi-Chun Shao ,  Chien-Hua Chu

发明人： Pin-Yuan Yu ,  Yi-Chun Shao ,  Chien-Hua Chu

IPC分类号： H01G4/005

CPC分类号： H01G4/005 ,  H01G4/33 ,  H01L28/92

摘要： A vertical semiconductor charge storage structure includes a substrate, at least one lower electrode, a dielectric layer and an upper electrode. The lower electrode includes a lower conductor, and a first side conductor and a second side conductor connected to the lower conductor. The first side conductor and the second side conductor are parallel to each other and form an included angle with the lower conductor. A height of the first side conductor from the substrate is greater than a height of the second side conductor from the substrate. The dielectric layer and the upper electrode are sequentially formed on surfaces of the substrate and the lower electrode. Accordingly, by forming the first side conductor and the second side conductor at different heights, an aperture ratio is increased to reduce difficulty in filling or deposition in subsequent processes to further enhance an overall yield rate.

摘要翻译： 垂直半导体电荷存储结构包括衬底，至少一个下电极，电介质层和上电极。 下电极包括下导体和连接到下导体的第一侧导体和第二侧导体。 第一侧导体和第二侧导体彼此平行并与下导体形成夹角。 第一侧导体与衬底的高度大于第二侧导体与衬底的高度。 电介质层和上电极依次形成在基板和下电极的表面上。 因此，通过以不同的高度形成第一侧导体和第二侧导体，增加开口率以减少后续处理中的填充或沉积的困难，以进一步提高总的屈服率。

公开(公告)号：US20060183256A1

公开(公告)日：2006-08-17

申请号：US11207895

申请日：2005-08-22

申请人： Ju-Hsin Chi ,  Kun-Jung Wu ,  Pin-Yuan Yu ,  Yu-Chi Lin ,  Yung-Chih Lin

发明人： Ju-Hsin Chi ,  Kun-Jung Wu ,  Pin-Yuan Yu ,  Yu-Chi Lin ,  Yung-Chih Lin

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of piping defect detection is provided. A semiconductor substrate having an active region and an isolation region is provided, a plurality of semiconductor elements are formed on the semiconductor substrate, a dielectric layer is deposited on the semiconductor substrate and the semiconductor elements, and first and second contact plugs are formed in the dielectric layer to connect the active region and the isolation region respectively. The first contact plug and the second contact plug are illuminated by an electron beam, accumulating charge on the second contact plug, and piping defects are detected between the first contact plug and the second contact plug according to brightness contrast between the first contact plug and the second contact plug.

摘要翻译： 提供了一种管道缺陷检测方法。 提供了具有有源区和隔离区的半导体衬底，在半导体衬底上形成多个半导体元件，在半导体衬底和半导体元件上淀积电介质层，第一和第二接触插塞形成在 电介质层分别连接有源区和隔离区。 第一接触插塞和第二接触插塞由电子束照射，在第二接触插塞上积累电荷，并且根据第一接触插塞和第二接触插塞之间的亮度对比度在第一接触插塞和第二接触插塞之间检测管道缺陷 第二个接触插头

公开(公告)号：US08921911B2

公开(公告)日：2014-12-30

申请号：US13609739

申请日：2012-09-11

申请人： Pin-Yuan Yu ,  Yi-Chun Shao ,  Chien-Hua Chu

发明人： Pin-Yuan Yu ,  Yi-Chun Shao ,  Chien-Hua Chu

IPC分类号： H01L27/108

CPC分类号： H01G4/005 ,  H01G4/33 ,  H01L28/92

摘要： A vertical semiconductor charge storage structure includes a substrate, at least one lower electrode, a dielectric layer and an upper electrode. The lower electrode includes a lower conductor, and a first side conductor and a second side conductor connected to the lower conductor. The first side conductor and the second side conductor are parallel to each other and form an included angle with the lower conductor. A height of the first side conductor from the substrate is greater than a height of the second side conductor from the substrate. The dielectric layer and the upper electrode are sequentially formed on surfaces of the substrate and the lower electrode. Accordingly, by forming the first side conductor and the second side conductor at different heights, an aperture ratio is increased to reduce difficulty in filling or deposition in subsequent processes to further enhance an overall yield rate.

摘要翻译： 垂直半导体电荷存储结构包括衬底，至少一个下电极，电介质层和上电极。 下电极包括下导体和连接到下导体的第一侧导体和第二侧导体。 第一侧导体和第二侧导体彼此平行并与下导体形成夹角。 第一侧导体与衬底的高度大于第二侧导体与衬底的高度。 电介质层和上电极依次形成在基板和下电极的表面上。 因此，通过以不同的高度形成第一侧导体和第二侧导体，增加开口率以减少后续处理中的填充或沉积的困难，以进一步提高总的屈服率。