公开(公告)号：US20190013203A1

公开(公告)日：2019-01-10

申请号：US16030269

申请日：2018-07-09

申请人： Raghav SREENIVASAN ,  Aditi CHANDRA ,  Arvind KAMATH

发明人： Raghav SREENIVASAN ,  Aditi CHANDRA ,  Arvind KAMATH

IPC分类号： H01L21/228 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092

摘要： A method of making a MOS device, a MOS device containing an aluminum nitride layer, and a CMOS circuit are disclosed. The method includes depositing an aluminum nitride layer on a structure including a silicon layer, depositing a dopant ink on the structure, and diffusing the dopant through the aluminum nitride layer into the silicon layer. The structure also includes a gate oxide layer on the silicon layer and a gate on the gate oxide layer. The dopant ink includes a dopant and a solvent. The MOS device includes a silicon layer, a gate oxide layer on the silicon layer, a gate on the gate oxide layer, and an aluminum nitride layer on the gate. The silicon layer includes a dopant on opposite sides of the gate.