公开(公告)号：US06440827B2

公开(公告)日：2002-08-27

申请号：US09853521

申请日：2001-05-11

申请人： Helga Braun ,  Ronald Kakoschke ,  Regina Stokan ,  Andreas Kux ,  Gunther Plasa

发明人： Helga Braun ,  Ronald Kakoschke ,  Regina Stokan ,  Andreas Kux ,  Gunther Plasa

IPC分类号： H01L21425

CPC分类号： H01L23/573 ,  H01L21/28512 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a wiring which runs at least piecewise in a substrate. At least one conductive connection runs in the semiconductor substrate and at least one conductive connection runs on the semiconductor substrate being provided. The semiconductor component enables applications in which high security against external manipulations is important.

摘要翻译： 一种用于制造在衬底中至少分段延伸的布线的方法。 至少一个导电连接在半导体衬底中延伸并且至少一个导电连接在所提供的半导体衬底上延伸。 该半导体组件使得能够对外部操作具有高安全性的应用非常重要。

公开(公告)号：US06429520B1

公开(公告)日：2002-08-06

申请号：US09391039

申请日：1999-09-07

申请人： Ronald Kakoschke ,  Regina Stokan

发明人： Ronald Kakoschke ,  Regina Stokan

IPC分类号： H01L2348

CPC分类号： H01L21/28568 ,  H01L21/76895 ,  H01L23/485 ,  H01L23/53271 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component has local silicon wiring. A first silicon region and a second silicon region are doped with dopants of opposite conductivity. The second silicon region is arranged at least partially over the first silicon region and is separated from it by an insulation layer. The insulation layer is formed with an opening. A conductive layer is disposed at the opening. The conductive layer is composed of a metal, a metal nitride or a combination thereof and connects the first and the second silicon regions electrically to one another.

摘要翻译： 半导体元件具有局部硅布线。 第一硅区域和第二硅区域掺杂有相反导电性的掺杂剂。 第二硅区域至少部分地布置在第一硅区域之上并且通过绝缘层与其分离。 绝缘层形成有开口。 导电层设置在开口处。 导电层由金属，金属氮化物或其组合构成，并且将第一和第二硅区彼此电连接。