Mesoscopic non-magnetic semiconductor magnetoresistive sensors fabricated with island lithography
    2.
    发明授权
    Mesoscopic non-magnetic semiconductor magnetoresistive sensors fabricated with island lithography 失效
    用岛状光刻制造的介观非磁性半导体磁阻传感器

    公开(公告)号:US06353317B1

    公开(公告)日:2002-03-05

    申请号:US09487386

    申请日:2000-01-19

    CPC classification number: G11B5/3993 G01R33/09 G01R33/095 H01L43/10

    Abstract: Mesoscopic magnetic field sensors which can detect weak magnetic fields (typically 0.05 Tesla) over areas as small as tens of thousands of square nanometers (e.g. 40 nm×400 nm). The combination of enhanced magneto-resistance in an inhomogeneous high mobility semiconductor, having special electrode arrangements, with the use of island lithography, enables the production of special semiconductor/metal nano-composite structures, and has made possible the fabrication of an entirely new type of magnetic field sensor which exhibits very superior magneto-resistive behavior.

    Abstract translation: 介观磁场传感器可以在小到几万平方纳米(例如40 nm×400 nm)的区域内检测弱磁场(通常为0.05特斯拉)。 在具有特殊电极布置的非均匀高迁移率半导体中使用岛状光刻技术的增强磁阻的组合使得能够生产特殊的半导体/金属纳米复合结构,并且使得可能制造出全新型 的磁场传感器,其具有非常优异的磁阻行为。

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