公开(公告)号：US20050169342A1

公开(公告)日：2005-08-04

申请号：US10976073

申请日：2004-10-28

申请人： Rick Glew ,  David MacQuistan ,  Ian Woods ,  John White

发明人： Rick Glew ,  David MacQuistan ,  Ian Woods ,  John White

IPC分类号： H01S3/08 ,  H01S5/12 ,  H01S5/30 ,  H01S5/323

CPC分类号： H01S5/12 ,  H01S5/1231 ,  H01S5/305 ,  H01S5/3235

摘要： To make a grating substructure in semiconductor material for use in a DFB laser, a first layer of semiconductor material is doped at a first doping concentration. A second layer of the semiconductor material is formed over the first layer. The second layer is doped higher concentration than the first layer and sufficiently different to change the refractive index of the semiconductor material. A third layer doped at a concentration comparable with the first layer is formed over the second layer. An etch is performed through a mask to form spaced etched regions extending at least through the second and third layers. Then a further layer of the semiconductor material doped at a doping concentration comparable the first and third layers is overgrown on the wafer. This results in a composite layer of the semiconductor material doped at a low doping concentration containing spaced islands of the semiconductor material doped with a dopant at a high doping concentration and having a different refractive index from the composite layer. The semiconductor material is preferably silicon-doped InP.

摘要翻译： 为了在用于DFB激光器的半导体材料中制造光栅子结构，以第一掺杂浓度掺杂第一层半导体材料。 在第一层上形成半导体材料的第二层。 第二层掺杂比第一层更高的浓度，并且充分地不同以改变半导体材料的折射率。 在第二层上形成以与第一层相当的浓度掺杂的第三层。 通过掩模进行蚀刻以形成至少延伸穿过第二层和第三层的间隔的蚀刻区域。 然后，以与第一和第三层相当的掺杂浓度掺杂的另一层半导体材料在晶片上长满。 这导致以低掺杂浓度掺杂的半导体材料的复合层，其中掺杂掺杂剂的半导体材料的间隔岛以高掺杂浓度并且具有与复合层不同的折射率。 半导体材料优选是掺杂硅的InP。