公开(公告)号：US06646346B1

公开(公告)日：2003-11-11

申请号：US09698459

申请日：2000-10-27

申请人： Ricky D. Snyder ,  Robert G Long ,  David W Hula ,  Mark D. Crook

发明人： Ricky D. Snyder ,  Robert G Long ,  David W Hula ,  Mark D. Crook

IPC分类号： H01L2348

CPC分类号： H01L23/564 ,  H01L21/32051 ,  H01L21/76828 ,  H01L21/76886 ,  H01L23/3171 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/1433 ,  H01L2924/00

摘要： An integrated circuit metallization structure using a titanium/aluminum alloy, and a method to generate such a structure, provide reduced leakage current by allowing mobile impurities such as water, oxygen, and hydrogen to passivate structural defects in the silicon layer of the IC. The titanium layer of the structure is at least partially alloyed with the aluminum layer, thereby restricting the ability of the titanium to getter the mobile impurities within the various layers of the IC. Despite the alloying of the titanium and aluminum, the metallization structure exhibits the superior contact resistance and electromigration properties associated with titanium.

摘要翻译： 使用钛/铝合金的集成电路金属化结构和产生这种结构的方法通过允许诸如水，氧和氢之类的移动杂质钝化IC的硅层中的结构缺陷来提供减小的漏电流。 该结构的钛层至少部分地与铝层合金化，从而限制钛吸收IC内各层内的移动杂质的能力。 尽管钛和铝的合金化，金属化结构表现出与钛相关的优异的接触电阻和电迁移性能。

公开(公告)号：US06903017B2

公开(公告)日：2005-06-07

申请号：US10648735

申请日：2003-08-26

申请人： Ricky D. Snyder ,  Robert G Long ,  David W Hula ,  Mark D. Crook

发明人： Ricky D. Snyder ,  Robert G Long ,  David W Hula ,  Mark D. Crook

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L23/564 ,  H01L21/32051 ,  H01L21/76828 ,  H01L21/76886 ,  H01L23/3171 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/1433 ,  H01L2924/00

摘要： An integrated circuit metallization structure using a titanium/aluminum alloy, and a method to generate such a structure, provide reduced leakage current by allowing mobile impurities such as water, oxygen, and hydrogen to passivate structural defects in the silicon layer of the IC. The titanium layer of the structure is at least partially alloyed with the aluminum layer, thereby restricting the ability of the titanium to getter the mobile impurities within the various layers of the IC. Despite the alloying of the titanium and aluminum, the metallization structure exhibits the superior contact resistance and electromigration properties associated with titanium.

摘要翻译： 使用钛/铝合金的集成电路金属化结构和产生这种结构的方法通过允许诸如水，氧和氢之类的移动杂质钝化IC的硅层中的结构缺陷来提供减小的漏电流。 该结构的钛层至少部分地与铝层合金化，从而限制钛吸收IC内各层内的移动杂质的能力。 尽管钛和铝的合金化，金属化结构表现出与钛相关的优异的接触电阻和电迁移性能。